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STB11NM60-1 Datenblatt(PDF) 4 Page - STMicroelectronics

Teilenummer STB11NM60-1
Bauteilbeschribung  N-channel 650V TJmax - 0.4OHM - 11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
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Electrical characteristics
STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1
4/16
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 250 µA, VGS= 0
600
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = 600 V
VDS = 600 V, Tc=125°C
1
10
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±30V
±
100
nA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250µA
34
5
V
RDS(on)
Static drain-source on
resistance
VGS= 10V, ID= 5.5A
0.4
0.45
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance
VDS > ID(on) x RDS(on)max,
ID =5.5A
5.2
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f=1 MHz, VGS=0
1000
230
25
pF
pF
pF
Coss eq
(2)
2.
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
inceases from 0 to 80% VDSS
Equivalent output
capacitance
VGS=0, VDS =0V to 480V
100
pF
RG
Gate input resistance
f=1 MHz gate DC bias = 0
Test signal level = 20mV
open drain
1.6
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=480V, ID = 11A
VGS =10V
(see Figure 15)
30
10
15
nC
nC
nC


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