Datenblatt-Suchmaschine für elektronische Bauteile |
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L6571AD Datenblatt(PDF) 3 Page - STMicroelectronics |
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L6571AD Datenblatt(HTML) 3 Page - STMicroelectronics |
3 / 8 page 3/8 L6571A L6571B PIN FUNCTION ELECTRICAL CHARACTERISTCS (VS = 12V; VBOOT -VOUT = 12V; Tj = 25°C; unless otherwise specified.) N° Pin Description 1 VS Supply input voltage with internal clamp [typ. 15.6V] 2 RF Oscillator timing resistor pin. A buffer set alternatively to VS and GND can provide current to the external resistor RF connected between pin 2 and 3. Alternatively, the signal on pin 2 can be used also to drive another IC (i.e. another L6569/71 to drive a full H-bridge) 3 CF Oscillator timing capacitor pin. A capacitor connected between this pin and GND fixes (together with RF) the oscillating frequency Alternatively an external logic signal can be applied to the pin to drive the IC. 4 GND Ground 5 LVG Low side driver output. The output stage can deliver 170mA source and 270mA sink [typ.values]. 6 OUT Upper driver floating reference 7 HVG High side driver output. The output stage can deliver 170mA source and 270mA sink [typ.values]. 8 BOOT Bootstrap voltage supply. It is the upper driver floating supply. Symbol Pin Parameter Test Condition Min. Typ. Max. Unit VSUVP 1 VS Turn On Threshold 8.3 9 9.7 V VSUVN VS Turn Off Threshold 7.3 8 8.7 V VSUVH VS Hysteresis 0.7 1 1.3 V VCL VS Clamping Voltage IS = 5mA 14.6 15.6 16.6 V ISU Start Up Current VS <VSUVN 150 250 µA Iq Quiescent Current VS >VSUVP 500 700 µA IBOOTLK 8 Leakage Current BOOT pin vs GND VBOOT =580V 5 µA IOUTLK 6 Leakage Current OUT pin vs GND VOUT =562V 5 µA IHVG SO 7 High Side Driver Source Current VHVG = 6V 110 175 mA IHVG SI High Side Driver Sink Current VHVG = 6V 190 275 mA ILVG SO 5 Low Side Driver Source Current VLVG = 6V 110 175 mA ILVG SI Low Side Driver Sink Current VLVG = 6V 190 275 mA VRFON 2 RF High Level Output Voltage IRF =1mA VS -0.05 VS -0.2 V VRF OFF RF Low Level Output Voltage IRF = -1mA 50 200 mV VCFU 3 CF Upper Threshold 7.7 8 8.2 V VCFL CF Lower Threshold 3.80 4 4.3 V td Internal Dead Time L6571A L6571B 0.85 0.50 1.25 0.72 1.65 0.94 µs µs |
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