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BY359-1500S Datenblatt(PDF) 1 Page - NXP Semiconductors

Teilenummer BY359-1500S
Bauteilbeschribung  Damper diode fast, high-voltage
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Hersteller  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BY359-1500S Datenblatt(HTML) 1 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
Damper diode
BY359-1500, BY359-1500S
fast, high-voltage
FEATURES
SYMBOL
QUICK REFERENCE DATA
• Low forward volt drop
V
R = 1500 V
• Fast switching
• Soft recovery characteristic
V
F ≤ 1.8 V / 2 V
• High thermal cycling performance
• Low thermal resistance
I
F(RMS) = 15.7 A
I
FSM ≤ 60 A
t
rr ≤ 600 ns / 350 ns
GENERAL DESCRIPTION
PINNING
SOD59 (TO220AC)
Glass-passivated double diffused
PIN
DESCRIPTION
rectifier diode featuring low forward
voltage drop, fast reverse recovery
1
cathode
and soft recovery characteristic.
The device is intended for use in TV
2
anode
receivers and PC monitors.
tab
cathode
The BY359 series is supplied in the
conventional
leaded
SOD59
(TO220AC) package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RSM
Peak non-repetitive reverse
-
1500
V
voltage
V
RRM
Peak repetitive reverse voltage
-
1500
V
V
RWM
Crest working reverse voltage
-
1300
V
I
F(peak)
Peak forward current
16-32kHz TV
BY359-1500
-
10
A
31-70kHz monitor
BY359-1500S
-
7
A
I
F(RMS)
RMS forward current
-
15.7
A
I
FRM
Peak repetitive forward current
sinusoidal; a = 1.57
-
60
A
I
FSM
Peak non-repetitive forward
t = 10 ms
-
60
A
current
t = 8.3 ms
-
66
A
sinusoidal; T
j = 150 ˚C prior to surge;
with reapplied V
RWM(max)
T
stg
Storage temperature
-40
150
˚C
T
j
Operating junction temperature
-
150
˚C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance junction to
-
-
2.0
K/W
mounting base
R
th j-a
Thermal resistance junction to
in free air.
-
60
-
K/W
ambient
k
a
12
1
tab
2
September 1998
1
Rev 1.300


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