Datenblatt-Suchmaschine für elektronische Bauteile |
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BY8008 Datenblatt(PDF) 4 Page - NXP Semiconductors |
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BY8008 Datenblatt(HTML) 4 Page - NXP Semiconductors |
4 / 10 page 1996 May 24 4 Philips Semiconductors Product specification Fast high-voltage soft-recovery controlled avalanche rectifiers BY8000 series ELECTRICAL CHARACTERISTICS Tj =25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF forward voltage IF = 100 mA; Tj =Tj max; see Figs 9 to 15 BY8004 −− 20 V BY8006 −− 25 V BY8008 −− 30 V BY8010 −− 38 V BY8012 −− 50 V BY8014 −− 55 V BY8016 −− 63 V IR reverse current VR =VRWmax; Tj = 120 °C −− 3 µA Qr recovery charge when switched from IF = 100 mA to VR ≥ 100 V and dIF/dt = −200 mA/µs; see Fig.16 −− 1nC tf fall time when switched from IF = 100 mA to VR ≥ 100 V and dIF/dt = −200 mA/µs; see Fig.16 80 −− ns trr reverse recovery time when switched from IF = 2 mA to IR = 4 mA; measured at IR = 1 mA; see Fig.17 −− 100 ns Cd diode capacitance VR =0V; f=1MHz BY8004 − 0.90 − pF BY8006 − 0.65 − pF BY8008 − 0.55 − pF BY8010 − 0.45 − pF BY8012 − 0.35 − pF BY8014 − 0.30 − pF BY8016 − 0.25 − pF |
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