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BYD147 Datenblatt(PDF) 2 Page - NXP Semiconductors

Teilenummer BYD147
Bauteilbeschribung  Ultra fast low-loss rectifier
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Hersteller  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BYD147 Datenblatt(HTML) 2 Page - NXP Semiconductors

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1999 Nov 11
2
Philips Semiconductors
Product specification
Ultra fast low-loss rectifier
BYD147
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Available in ammo-pack
• Smallest surface mount rectifier
outline.
DESCRIPTION
Cavity free cylindrical glass SOD87
package through Implotec
(1)
technology. This package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
(1) Implotec is a trademark of Philips.
handbook, 4 columns
MAM061
ka
Fig.1 Simplified outline (SOD87) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
400
V
VR
continuous reverse voltage
400
V
IF(AV)
average forward current
Ttp = 140 °C; averaged over any
20 ms period; see Figs 5 and 6
1A
Ttp =90 °C; averaged over any
20 ms period; see Figs 5 and 6
2A
IFSM
non-repetitive peak forward current
t = 10 ms half sinewave;
VR =VRRMmax
25
A
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
−65
+175
°C
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
VF
forward voltage
IF = 1 A; see Fig.2; Tj = 150 °C
0.88
V
IF = 1 A; see Fig.2
1.05
V
IR
reverse current
VR =VRRMmax; see Fig.3
5
µA
VR =VRRMmax; Tj = 150 °C; see Fig.3
150
µA
trr
reverse recovery time
when switched from IF = 0.5 A to IR =1A;
measured at IR = 0.25 A
50
ns


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