Datenblatt-Suchmaschine für elektronische Bauteile |
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BYD13J Datenblatt(PDF) 2 Page - NXP Semiconductors |
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BYD13J Datenblatt(HTML) 2 Page - NXP Semiconductors |
2 / 7 page 1996 May 24 2 Philips Semiconductors Product specification Controlled avalanche rectifiers BYD13 series FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability • Available in ammo-pack. DESCRIPTION Cavity free cylindrical glass package through Implotec ™(1) technology. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips. MARKING TYPE NUMBER MARKING CODE BYD13D 13D PH BYD13G 13G PH BYD13J 13J PH BYD13K 13K PH BYD13M 13M PH Fig.1 Simplified outline (SOD81) and symbol. handbook, 4 columns a k MAM123 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage BYD13D − 200 V BYD13G − 400 V BYD13J − 600 V BYD13K − 800 V BYD13M − 1000 V VRWM crest working reverse voltage BYD13D − 200 V BYD13G − 400 V BYD13J − 600 V BYD13K − 800 V BYD13M − 1000 V VR continuous reverse voltage BYD13D − 200 V BYD13G − 400 V BYD13J − 600 V BYD13K − 800 V BYD13M − 1000 V |
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