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BYD13J Datenblatt(PDF) 2 Page - NXP Semiconductors

Teilenummer BYD13J
Bauteilbeschribung  Controlled avalanche rectifiers
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Hersteller  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BYD13J Datenblatt(HTML) 2 Page - NXP Semiconductors

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1996 May 24
2
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BYD13 series
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• Available in ammo-pack.
DESCRIPTION
Cavity free cylindrical glass package
through Implotec
(1) technology.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
(1) Implotec is a trademark of Philips.
MARKING
TYPE NUMBER
MARKING CODE
BYD13D
13D PH
BYD13G
13G PH
BYD13J
13J PH
BYD13K
13K PH
BYD13M
13M PH
Fig.1 Simplified outline (SOD81) and symbol.
handbook, 4 columns
a
k
MAM123
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BYD13D
200
V
BYD13G
400
V
BYD13J
600
V
BYD13K
800
V
BYD13M
1000
V
VRWM
crest working reverse voltage
BYD13D
200
V
BYD13G
400
V
BYD13J
600
V
BYD13K
800
V
BYD13M
1000
V
VR
continuous reverse voltage
BYD13D
200
V
BYD13G
400
V
BYD13J
600
V
BYD13K
800
V
BYD13M
1000
V


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