Datenblatt-Suchmaschine für elektronische Bauteile |
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BYD167 Datenblatt(PDF) 2 Page - NXP Semiconductors |
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BYD167 Datenblatt(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 1999 Nov 11 2 Philips Semiconductors Product specification Ultra fast low-loss rectifier BYD167 FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Available in ammo-pack • Smallest surface mount rectifier package. DESCRIPTION Cavity free cylindrical glass SOD87 package through Implotec ™(1) technology. The SOD87 package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips. handbook, 4 columns MAM061 ka Fig.1 Simplified outline (SOD87) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). ELECTRICAL CHARACTERISTICS Tj =25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage − 600 V VR continuous reverse voltage − 600 V IF(AV) average forward current Ttp = 135 °C; averaged over any 20 ms period; see Figs 5 and 6 − 1A Ttp =70 °C; averaged over any 20 ms period; see Figs 5 and 6 − 2A IFSM non-repetitive peak forward current t = 10 ms half sinewave; VR =VRRMmax − 25 A Tstg storage temperature −65 +175 °C Tj junction temperature −65 +175 °C SYMBOL PARAMETER CONDITIONS MAX. UNIT VF forward voltage IF = 1 A; Tj = 150 °C; see Fig.2 1.05 V IF = 1 A; see Fig.2 1.25 V IR reverse current VR =VRRMmax; see Fig.3 5 µA VR =VRRMmax; Tj = 150 °C; see Fig.3 150 µA trr reverse recovery time when switched from IF = 0.5 A to IR =1A; measured at IR = 0.25 A 50 ns |
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