Datenblatt-Suchmaschine für elektronische Bauteile |
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4N32300 Datenblatt(PDF) 2 Page - Fairchild Semiconductor |
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4N32300 Datenblatt(HTML) 2 Page - Fairchild Semiconductor |
2 / 13 page ©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com 4N29, 4N30, 4N31, 4N32, 4N33 Rev. 1.0.1 2 Absolute Maximum Ratings (TA = 25°C Unless otherwise specified.) Symbol Parameter Device Value Units TOTAL DEVICE TSTG Storage Temperature Non M -55 to +150 °C M -40 to +150 TOPR Operating Temperature Non M -55 to +100 °C M -40 to +100 TSOL Lead Solder Temperature All 260 for 10 sec °C PD Total Device Power Dissipation @ TA = 25°C All 250 mW Derate above 25°C 3.3 mW/°C EMITTER IF Continuous Forward Current All 80 mA VR Reverse Voltage All 3 V IF(pk) Forward Current – Peak (300µs, 2% Duty Cycle) All 3.0 A PD LED Power Dissipation @ TA = 25°C All 150 mW Derate above 25°C 2.0 mW/°C DETECTOR BVCEO Collector-Emitter Breakdown Voltage All 30 V BVCBO Collector-Base Breakdown Voltage All 30 V BVECO Emitter-Collector Breakdown Voltage All 5 V PD Detector Power Dissipation @ TA = 25°C All 150 mW Derate above 25°C 2.0 mW/°C IC Continuous Collector Current All 150 mA |
Ähnliche Teilenummer - 4N32300 |
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Ähnliche Beschreibung - 4N32300 |
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