Datenblatt-Suchmaschine für elektronische Bauteile |
|
BYD72 Datenblatt(PDF) 3 Page - NXP Semiconductors |
|
BYD72 Datenblatt(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 1998 Dec 03 3 Philips Semiconductors Preliminary specification Ultra fast low-loss controlled avalanche rectifiers BYD72 series ELECTRICAL CHARACTERISTICS Tj =25 °C unless otherwise specified. THERMAL CHARACTERISTICS Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper layer ≥40 µm, pitch 5 mm; see Fig.8. SYMBOL PARAMETER CONDITIONS MAX. UNIT VF forward voltage IF = 1 A; see Figs 4 and 5 BYD72A to D 0.98 V BYD72E to G 1.05 V IR reverse current VR =VRRMmax 1 µA VR =VRRMmax; Tj = 165 °C; see Fig.6 100 µA trr reverse recovery time when switched from IF = 0.5 A to IR =1A; measured at IR = 0.25 A; see Fig.9 BYD72A to D 25 ns BYD72E to G 50 ns VFRM forward recovery voltage when switched to IF = 1 A in 50 ns BYD72A to D 1.55 V BYD72E to G 3.40 V SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 150 K/W |
Ähnliche Teilenummer - BYD72 |
|
Ähnliche Beschreibung - BYD72 |
|
|
Link URL |
Privatsphäre und Datenschutz |
ALLDATASHEETDE.COM |
War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |