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BYD73E Datenblatt(PDF) 2 Page - NXP Semiconductors

Teilenummer BYD73E
Bauteilbeschribung  Ultra fast low-loss controlled avalanche rectifiers
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Hersteller  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BYD73E Datenblatt(HTML) 2 Page - NXP Semiconductors

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1996 Sep 18
2
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD73 series
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• Available in ammo-pack.
DESCRIPTION
Cavity free cylindrical glass SOD81
package through Implotec
(1)
technology. This package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
(1) Implotec is a trademark of Philips.
Fig.1 Simplified outline (SOD81) and symbol.
handbook, 4 columns
a
k
MAM123
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BYD73A
50
V
BYD73B
100
V
BYD73C
150
V
BYD73D
200
V
BYD73E
250
V
BYD73F
300
V
BYD73G
400
V
VR
continuous reverse voltage
BYD73A
50
V
BYD73B
100
V
BYD73C
150
V
BYD73D
200
V
BYD73E
250
V
BYD73F
300
V
BYD73G
400
V
IF(AV)
average forward current
Ttp =55 °C; lead length = 10 mm;
see Figs 2 and 3;
averaged over any 20 ms period;
see also Figs 10 and 11
BYD73A to D
1.75
A
BYD73E to G
1.70
A
IF(AV)
average forward current
Tamb =60 °C; PCB mounting (see
Fig.16); see Figs 4 and 5;
averaged over any 20 ms period;
see also Figs 10 and 11
BYD73A to D
1.00
A
BYD73E to G
0.95
A


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