BYG50J datasheet(2/6 Pages) PHILIPS

Teilenummer	BYG50J

Bauteilbeschribung	Controlled avalanche rectifiers

Download	6 Pages

Scroll/Zoom	100%

Hersteller	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

Logo

2 / 6 page

1996 May 24

2

Philips Semiconductors

Preliminary speciﬁcation

Controlled avalanche rectiﬁers

BYG50 series

FEATURES

• Glass passivated

• High maximum operating

temperature

• Low leakage current

• Excellent stability

• Guaranteed avalanche energy

absorption capability

• UL 94V-O classified plastic

package

• Shipped in 12 mm embossed tape.

DESCRIPTION

DO-214AC; SOD106 surface

mountable package with glass

passivated chip.

The well-defined void-free case is of a

transfer-moulded thermo-setting

plastic.

Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.

handbook, 4 columns

MSA474

Top view

Side view

cathode

band

ka

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VRRM

repetitive peak reverse voltage

BYG50D

−

200

V

BYG50G

−

400

V

BYG50J

−

600

V

BYG50K

−

800

V

BYG50M

−

1000

V

VR

continuous reverse voltage

BYG50D

−

200

V

BYG50G

−

400

V

BYG50J

−

600

V

BYG50K

−

800

V

BYG50M

−

1000

V

IF(AV)

average forward current

averaged over any 20 ms

period; Ttp = 100 °C; see Fig.2

−

2.1

A

averaged over any 20 ms

period; Al2O3 PCB mounting (see

Fig.7); Tamb =60 °C; see Fig.3

−

1.0

A

averaged over any 20 ms

period; epoxy PCB mounting

(see Fig.7); Tamb =60 °C;

see Fig.3

−

0.7

A

IFSM

non-repetitive peak forward current

t = 10 ms half sinewave;

Tj =Tj max prior to surge;

VR =VRRMmax

−

30

A

Ähnliche Beschreibung - BYG50J

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
NXP Semiconductors	BYW54	46Kb / 7P	Controlled avalanche rectifiers 1996 Oct 03
	BAS11	42Kb / 7P	Controlled avalanche rectifiers 1996 Sep 26
	1N5059	74Kb / 7P	Controlled avalanche rectifiers 1996 Jun 19
Shenzhen Taychipst Elec...	BYG50D	4Mb / 3P	Controlled avalanche rectifiers
NXP Semiconductors	BYM56	48Kb / 7P	Controlled avalanche rectifiers 1996 May 24
NXP Semiconductors	BYD11	46Kb / 7P	Controlled avalanche rectifiers 1996 Sep 26
New Jersey Semi-Conduct...	BYW54	136Kb / 2P	Controlled avalanche rectifiers
Shenzhen Taychipst Elec...	BYD13D	3Mb / 3P	Controlled avalanche rectifiers
NXP Semiconductors	BYD12	49Kb / 8P	Controlled avalanche rectifiers 1998 Dec 03
NXP Semiconductors	BYD13	39Kb / 7P	Controlled avalanche rectifiers 1996 May 24

More results

BYG50J Datenblatt(PDF) 2 Page - NXP Semiconductors

BYG50J Datenblatt(HTML) 2 Page - NXP Semiconductors

Ähnliche Teilenummer - BYG50J

Ähnliche Beschreibung - BYG50J

Html Pages

1 2 3 4 5 6

Datenblatt Download

Link URL