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BYG80 Datenblatt(PDF) 6 Page - NXP Semiconductors

Teilenummer BYG80
Bauteilbeschribung  Ultra fast low-loss controlled avalanche rectifiers
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Hersteller  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BYG80 Datenblatt(HTML) 6 Page - NXP Semiconductors

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1997 Nov 25
6
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
BYG80F and G
Switched mode application; VR =VRRMmax; δ = 0.5; a = 1.42
Device mounted as shown in Fig.27;
1: Al2O3 PCB; 2: epoxy PCB.
Fig.6
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
handbook, halfpage
0
(1)
(2)
200
100
Tamb (οC)
2
1.5
IF(AV)
(A)
0.5
0
1
MGL080
BYG80J
Switched mode application; VR =VRRMmax; δ = 0.5; a = 1.42
Device mounted as shown in Fig.27;
1: Al2O3 PCB; 2: epoxy PCB.
Fig.7
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
handbook, halfpage
0
200
0
0.4
0.8
1.2
1.6
40
(1)
(2)
IF(AV)
(A)
80
120
Tamb (oC)
160
MGL092
Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
BYG80A to D
Ttp = 100 °C; Rth j-tp = 25 K/W.
VRRMmax during 1 - δ; curves include derating for Tj max at VRRM = 200 V.
handbook, full pagewidth
30
0
10
IFRM
(A)
20
MGL086
10−2
10−1
110
tP (ms)
102
103
104
δ = 0.05
1
0.1
0.2
0.5


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