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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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BYG90-90 Datenblatt(PDF) 4 Page - NXP Semiconductors |
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BYG90-90 Datenblatt(HTML) 4 Page - NXP Semiconductors |
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4 / 6 page  1996 May 13 4 Philips Semiconductors Product specification Schottky barrier rectifier diode BYG90-90 GRAPHICAL DATA (1) Tamb = 150 °C. (2) Tamb = 125 °C. (3) Tamb = 100 °C. (4) Tamb = 85 °C. (5) Tamb = 25 °C. Fig.2 Forward current as a function of forward voltage; typical values. handbook, halfpage MLC497 (1) (2) (3) (4) (5) 10 1 10 2 10 3 10 4 0 0.4 0.8 1.2 1.6 V (V) F I F (mA) Fig.3 Reverse current as a function of reverse voltage; typical values. (1) Tamb = 150 °C. (2) Tamb = 125 °C. (3) Tamb = 100 °C. (4) Tamb = 85 °C. (5) Tamb = 25 °C. handbook, halfpage 100 0 MLC498 20 40 60 80 V (V) R IR ( µA) 10 3 10 2 10 4 10 10 5 1 (1) (2) (3) (4) (5) Fig.4 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz. handbook, halfpage 10 3 10 2 10 C 0 50 100 V (V) R MLC499 d (pF) |
Ähnliche Teilenummer - BYG90-90 |
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Ähnliche Beschreibung - BYG90-90 |
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