BYM359DX datasheet(2/7 Pages) PHILIPS

Teilenummer	BYM359DX

Bauteilbeschribung	Dual diode fast, high-voltage

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Hersteller	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

Product specification

Dual diode

BYM359DX

fast, high-voltage

ISOLATION LIMITING VALUE & CHARACTERISTIC

T

hs = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V

isol

Repetitive peak voltage from all

R.H.

≤ 65 % ; clean and dustfree

-

2500

V

three terminals to external

heatsink

C

isol

Capacitance from T2 to external f = 1 MHz

-

22

-

pF

heatsink

THERMAL RESISTANCES

DAMPER

MODULATOR

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

TYP.

MAX.

UNIT

R

th j-hs

Thermal resistance junction to

with heatsink

-

3.5

-

3.5

K/W

heatsink

compound

R

th j-a

Thermal resistance junction to

in free air.

35

-

35

K/W

ambient

STATIC CHARACTERISTICS

T

j = 25 ˚C unless otherwise stated

DAMPER

MODULATOR

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

TYP.

MAX.

UNIT

V

F

Forward voltage

I

F = 6.5 A

1.1

1.45

1.15

1.55

V

I

F = 6.5 A; Tj = 125˚C

1.05

1.3

1.1

1.45

V

I

R

Reverse current

V

R = VRWM

10

250

10

100

µA

V

R = VRWM

50

500

100

600

µA

T

j = 100 ˚C

DYNAMIC CHARACTERISTICS

T

j = 25 ˚C unless otherwise stated

DAMPER

MODULATOR

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

TYP.

MAX.

UNIT

t

rr

Reverse recovery time

I

F = 1 A; VR ≥ 30 V;

200

300

125

145

ns

-dI

F/dt = 50 A/µs

Q

s

Reverse recovery charge

2 A,30 V,20 A/

µs

1.2

2.0

0.5

0.7

µC

V

fr

Peak forward recovery voltage

I

F = 6.5 A;

27

-

18.0

-

V

dI

F/dt = 50 A/µs

March 2000

2

Rev 1.000

Ähnliche Beschreibung - BYM359DX

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