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ADF4113HV Datenblatt(Datasheet) 5 Page - Analog Devices

Teile-Nr. ADF4113HV
Beschreibung  High Voltage Charge Pump, PLL Synthesizer
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Hersteller  AD [Analog Devices]
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ADF4113HV
Rev. 0 | Page 5 of 20
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 3.
Parameter
Rating
AVDD to GND1
−0.3 V to +7 V
AVDD to DVDD
−0.3 V to +0.3 V
VP to GND
−0.3 V to +18 V
Digital I/O Voltage to GND
−0.3 V to VDD + 0.3 V
Analog I/O Voltage to GND
−0.3 V to VP + 0.3 V
REFIN, RFINA, RFINB to GND
−0.3 V to VDD + 0.3 V
RFINA to RFINB
±320 mV
Operating Temperature Range
Industrial (B Version)
−40°C to +85°C
Storage Temperature Range
−65°C to +150°C
Maximum Junction Temperature
150°C
Lead Temperature, Soldering
Vapor Phase (60 sec)
215°C
Infrared (15 sec)
220°C
1 GND = AGND = DGND = 0 V.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
This device is a high performance RF integrated circuit with an
ESD rating of <1 kV, and it is ESD sensitive. Proper precautions
should be taken for handling and assembly.
TRANSISTOR COUNT
The transistor count is 12,150 (CMOS) and 348 (bipolar).
THERMAL RESISTANCE
Table 4. Thermal Resistance
Package Type
θJA
Unit
TSSOP
150.4
°C/W
LFCSP (Paddle Soldered)
122
°C/W
LFCSP (Paddle Not Soldered)
216
°C/W
ESD CAUTION




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