UMZ1NT1 datasheet(1/5 Pages) ONSEMI

Teilenummer	UMZ1NT1

Bauteilbeschribung	Complementary Dual General Purpose Amplifier Transistor

Download	5 Pages

Scroll/Zoom	100%

Hersteller	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

Logo

1 / 5 page

May, 2006 − Rev. 5

Publication Order Number:

UMZ1NT1/D

UMZ1NT1

Complementary Dual

General Purpose

Amplifier Transistor

PNP and NPN Surface Mount

Features

• High Voltage and High Current: VCEO = 50 V, IC = 200 mA

• High hFE: hFE = 200X400

• Moisture Sensitivity Level: 1

• ESD Rating − Human Body Model: 3A

ESD Rating − Machine Model: C

• Pb−Free Package is Available

MAXIMUM RATINGS (TA = 25°C)

Rating

Symbol

Value

Unit

Collector−Base Voltage

V(BR)CBO

60

Vdc

Collector−Emitter Voltage

V(BR)CEO

50

Vdc

Emitter−Base Voltage

V(BR)EBO

7.0

Vdc

Collector Current − Continuous

IC

200

mAdc

THERMAL CHARACTERISTICS

Characteristic

(One Junction Heated)

Symbol

Max

Unit

Total Device Dissipation

TA = 25°C

Derate above 25

°C

PD

187 (Note 1)

256 (Note 2)

1.5 (Note 1)

2.0 (Note 2)

mW

mW/

°C

Thermal Resistance, Junction-to-Ambient

RqJA

670 (Note 1)

490 (Note 2)

°C/W

Characteristic

(Both Junctions Heated)

Symbol

Max

Unit

Total Device Dissipation

TA = 25°C

Derate above 25

°C

PD

250 (Note 1)

385 (Note 2)

2.0 (Note 1)

3.0 (Note 2)

mW

mW/

°C

Thermal Resistance, Junction-to-Ambient

RqJA

493 (Note 1)

325 (Note 2)

°C/W

Thermal Resistance, Junction-to-Lead

RqJL

188 (Note 1)

208 (Note 2)

°C/W

Junction and Storage Temperature

TJ, Tstg

− 55 to +150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−4 @ Minimum Pad

2. FR−4 @ 1.0 x 1.0 inch Pad

SC−88

CASE 419B

MARKING DIAGRAM

1

3Z = Device Code

M

= Date Code

G

= Pb−Free Package

Device*

Package

Shipping†

ORDERING INFORMATION

UMZ1NT1

SC−88

3000 / Tape & Reel

*The “T1” suffix refers to a 7 inch reel.

Q1

(4)

(5)

(6)

(1)

(2)

(3)

Q2

3Z M

G

1

UMZ1NT1G

SC−88

(Pb−Free)

3000 / Tape & Reel

(Note: Microdot may be in either location)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

http://onsemi.com

Ähnliche Beschreibung - UMZ1NT1

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
ON Semiconductor	UMZ1NT1G	105Kb / 5P	Complementary Dual General Purpose Amplifier Transistor October, 2009 ??Rev. 8
	HN1B01FDW1T1G	69Kb / 6P	Complementary Dual General Purpose Amplifier Transistor June, 2016 ??Rev. 4
	UMZ1NT1G	72Kb / 5P	Complementary Dual General Purpose Amplifier Transistor September, 2016 ??Rev. 9
Motorola, Inc	MD986	161Kb / 5P	COMPLEMENTARY DUAL GENERAL PURPOSE TRANSISTOR
ON Semiconductor	NST847BPDP6T5G	107Kb / 7P	Dual Complementary General Purpose Transistor May, 2008 ??Rev. 0
	NST3946DP6T5G	70Kb / 7P	Dual Complementary General Purpose Transistor June, 2014 ??Rev. 2
	NST3946DP6T5G	109Kb / 7P	Dual Complementary General Purpose Transistor July, 2008 ??Rev. 1
Pan Jit International I...	IMZ2A	598Kb / 5P	COMPLEMENTARY DUAL GENERAL PURPOSE AMPLIFIER TRANSIS
ON Semiconductor	NST3946DXV6T1G	172Kb / 12P	Complementary General Purpose Transistor July, 2012 ??Rev. 2
ON Semiconductor	NST3946DXV6	125Kb / 12P	Complementary General Purpose Transistor July, 2014 ??Rev. 3

More results

UMZ1NT1 Datenblatt(PDF) 1 Page - ON Semiconductor

UMZ1NT1 Datenblatt(HTML) 1 Page - ON Semiconductor

Ähnliche Teilenummer - UMZ1NT1

Ähnliche Beschreibung - UMZ1NT1

Html Pages

1 2 3 4 5

Datenblatt Download

Link URL