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BF494 Datenblatt(PDF) 1 Page - Fairchild Semiconductor

Teilenummer BF494
Bauteilbeschribung  NPN RF Transistor
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Hersteller  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

BF494 Datenblatt(HTML) 1 Page - Fairchild Semiconductor

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©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
BF494 Rev. A
tm
July 2006
BF494
NPN RF Transistor
Absolute Maximum Ratings * T
a = 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics
Electrical Characteristics* T
C = 25°C unless otherwise noted
* DC Item are tested by Pulse Test: Pulse Width
≤300us, Duty Cycle≤2%
Symbol
Parameter
Value
Unit
VCEO
Collector-Emitter Voltage
20
V
VCBO
Collector-Base Voltage
30
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current - Continuous
30
mA
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature Range
- 55 ~ 150
°C
Symbol
Parameter
Value
Unit
PD
Total Device Dissipation, by RθJA
Derate above 25
°C
350
2.8
mW
mW/
°C
RθJC
Thermal Resistance, Junction to case
125
°C/W
RθJA
Thermal Resistance, Junction to Ambient
357
°C/W
Symbol
Parameter
Conditions
Min.
Max.
Units
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC = 1.0mA, IB = 0
20
V
V(BR)CBO
Collector-Base BreakdownVoltage
IC = 10µA, IE = 0
30
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10µA, IC = 0
5.0
V
ICES
Collector-Emitter Sustaining Current
VCE = 40V, VEB = 0V
10
nA
hFE
DC Current Gain
VCE = 10V, IC = 1mA
67
222
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 10mA, IB = 5mA
0.2
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 10mA, IB = 5mA
0.92
V
VBE(ON)
Base-Emitter On Voltage
VCE = 10V, IC = 10mA
650
740
mV
1. Collector 2. Emitter 3. Base
TO-92


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