Datenblatt-Suchmaschine für elektronische Bauteile |
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BF494 Datenblatt(PDF) 1 Page - Fairchild Semiconductor |
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BF494 Datenblatt(HTML) 1 Page - Fairchild Semiconductor |
1 / 3 page ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com BF494 Rev. A tm July 2006 BF494 NPN RF Transistor Absolute Maximum Ratings * T a = 25°C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Thermal Characteristics Electrical Characteristics* T C = 25°C unless otherwise noted * DC Item are tested by Pulse Test: Pulse Width ≤300us, Duty Cycle≤2% Symbol Parameter Value Unit VCEO Collector-Emitter Voltage 20 V VCBO Collector-Base Voltage 30 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 30 mA TJ Junction Temperature 150 °C TSTG Storage Temperature Range - 55 ~ 150 °C Symbol Parameter Value Unit PD Total Device Dissipation, by RθJA Derate above 25 °C 350 2.8 mW mW/ °C RθJC Thermal Resistance, Junction to case 125 °C/W RθJA Thermal Resistance, Junction to Ambient 357 °C/W Symbol Parameter Conditions Min. Max. Units V(BR)CEO Collector-Emitter Breakdown Voltage IC = 1.0mA, IB = 0 20 V V(BR)CBO Collector-Base BreakdownVoltage IC = 10µA, IE = 0 30 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 5.0 V ICES Collector-Emitter Sustaining Current VCE = 40V, VEB = 0V 10 nA hFE DC Current Gain VCE = 10V, IC = 1mA 67 222 VCE(sat) Collector-Emitter Saturation Voltage IC = 10mA, IB = 5mA 0.2 V VBE(sat) Base-Emitter Saturation Voltage IC = 10mA, IB = 5mA 0.92 V VBE(ON) Base-Emitter On Voltage VCE = 10V, IC = 10mA 650 740 mV 1. Collector 2. Emitter 3. Base TO-92 |
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