Datenblatt-Suchmaschine für elektronische Bauteile |
|
FDD4243 Datenblatt(PDF) 2 Page - Fairchild Semiconductor |
|
FDD4243 Datenblatt(HTML) 2 Page - Fairchild Semiconductor |
2 / 6 page FDD4243 Rev.C www.fairchildsemi.com 2 Electrical Characteristics T J = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250µA, VGS = 0V -40 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = -250µA, referenced to 25°C -32 mV/°C IDSS Zero Gate Voltage Drain Current VDS = -32V, -1 µA VGS = 0V TJ = 125°C -100 IGSS Gate to Source Leakage Current VGS = ±20V, VGS = 0V ±100 nA On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250µA -1 -1.6 -3 V ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250µA, referenced to 25°C 4.7 mV/°C rDS(on) Drain to Source On Resistance VGS = -10V, ID = -6.7A 36 44 m Ω VGS = -4.5V, ID = -5.5A 48 64 VGS = -10V, ID = -6.7A, TJ = 125°C 53 69 gFS Forward Transconductance VDS = -5V, ID = -6.7A 16 S Dynamic Characteristics Ciss Input Capacitance VDS = -20V, VGS = 0V, f = 1MHz 1165 1550 pF Coss Output Capacitance 165 220 pF Crss Reverse Transfer Capacitance 90 135 pF Rg Gate Resistance f = 1MHz 4 Ω Switching Characteristics td(on) Turn-On Delay Time VDD = -20V, ID = -6.7A VGS = -10V, RGEN = 6Ω 6 12 ns tr Rise Time 15 26 ns td(off) Turn-Off Delay Time 22 35 ns tf Fall Time 7 14 ns Qg(TOT) Total Gate Charge at 10V VDD = -20V, ID = -6.7A VGS = -10V 21 29 nC Qgs Gate to Source Gate Charge 3.4 nC Qgd Gate to Drain “Miller” Charge 4 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = -6.7A (Note 2) 0.86 1.2 V trr Reverse Recovery Time IF = -6.7A, di/dt = 100A/µs 29 43 ns Qrr Reverse Recovery Charge 30 44 nC Notes: 1: RθJA is sum of junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJC is determined by the user’s board design. 2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. 3: Starting TJ = 25°C, L = 3mH, IAS = 7.5A, VDD = 40V, VGS = 10V. a. 40°C/W when mounted on a 1 in2 pad of 2 oz copper b. 96°C/W when mounted on a minimum pad. |
Ähnliche Teilenummer - FDD4243 |
|
Ähnliche Beschreibung - FDD4243 |
|
|
Link URL |
Privatsphäre und Datenschutz |
ALLDATASHEETDE.COM |
War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |