IRFZ48N datasheet(5/8 Pages) PHILIPS

Teilenummer	IRFZ48N

Bauteilbeschribung	N-channel enhancement mode TrenchMOS transistor

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Hersteller	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

Product specification

N-channel enhancement mode

IRFZ48N

TrenchMOS

TM transistor

Fig.9. Normalised drain-source on-state resistance.

a = R

DS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 25 A; VGS = 5 V

Fig.10. Gate threshold voltage.

V

GS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS

Fig.11. Sub-threshold drain current.

I

D = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS

Fig.12. Typical capacitances, C

iss, Coss, Crss.

C = f(V

DS); conditions: VGS = 0 V; f = 1 MHz

Fig.13. Typical turn-on gate-charge characteristics.

V

GS = f(QG); conditions: ID = 50 A; parameter VDS

Fig.14. Typical reverse diode current.

I

F = f(VSDS); conditions: VGS = 0 V; parameter Tj

-100

-50

0

50

100

150

200

0.5

1

1.5

2

2.5

BUK959-60

Tmb / degC

Rds(on) normlised to 25degC

a

0.01

0.1

1

10

100

0

5

1

1.5

2

2.5

3

3.5

4

VDS/V

Ciss

Coss

Crss

BUK759-60

-100

-50

0

50

100

150

200

0

1

2

3

4

5

Tj / C

VGS(TO) / V

max.

typ.

min.

0

1020

30405060

0

2

4

6

8

10

12

VGS/V

VDS = 14V

VDS = 44V

QG/nC

01

23

45

1E-06

1E-05

1E-04

1E-03

1E-02

1E-01

Sub-Threshold Conduction

typ

2%

98%

0

0.2

0.4

0.6

0.8

1

1.2

1.4

0

20

40

60

80

100

IF/A

VSDS/V

Tj/C =

175

25

February 1999

5

Rev 1.000

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