IRFZ48N datasheet(2/8 Pages) PHILIPS

Teilenummer	IRFZ48N

Bauteilbeschribung	N-channel enhancement mode TrenchMOS transistor

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Hersteller	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

Product specification

N-channel enhancement mode

IRFZ48N

TrenchMOS

TM transistor

STATIC CHARACTERISTICS

T

j= 25˚C

unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V

(BR)DSS

Drain-source breakdown

V

GS = 0 V; ID = 0.25 mA;

55

-

V

voltage

T

j = -55˚C

50

-

V

GS(TO)

Gate threshold voltage

V

DS = VGS; ID = 1 mA

2

3.0

4.0

V

T

j = 175˚C

1

-

V

T

j = -55˚C

-

4.4

V

I

DSS

Zero gate voltage drain current

V

DS = 55 V; VGS = 0 V;

-

0.05

10

µA

T

j = 175˚C

-

500

µA

I

GSS

Gate source leakage current

V

GS = ±10 V; VDS = 0 V

-

0.02

1

µA

T

j = 175˚C

-

20

µA

±V

(BR)GSS

Gate-source breakdown

I

G = ±1 mA;

16

-

V

voltage

R

DS(ON)

Drain-source on-state

V

GS = 10 V; ID = 25 A

-

12

16

m

Ω

resistance

T

j = 175˚C

-

30

m

Ω

DYNAMIC CHARACTERISTICS

T

mb = 25˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

g

fs

Forward transconductance

V

DS = 25 V; ID = 25 A

8

39

-

S

C

iss

Input capacitance

V

GS = 0 V; VDS = 25 V; f = 1 MHz

-

2200

2900

pF

C

oss

Output capacitance

-

500

600

pF

C

rss

Feedback capacitance

-

200

270

pF

Q

g(tot)

Total gate charge

I

D = 50 A; VDD = 44 V; VGS = 10 V

-

85

nC

Q

gs

Gate-source charge

-

19

nC

Q

gd

Gate-drain (Miller) charge

-

37

nC

t

d on

Turn-on delay time

V

DD = 30 V; ID = 25 A;

-

18

26

ns

t

r

Turn-on rise time

V

GS = 10 V; RG = 10 Ω

-

3585ns

t

d off

Turn-off delay time

Resistive load

-

45

60

ns

t

f

Turn-off fall time

-

30

45

ns

L

d

Internal drain inductance

Measured from contact screw on

-

3.5

-

nH

tab to centre of die

L

d

Internal drain inductance

Measured from drain lead 6 mm

-

4.5

-

nH

from package to centre of die

L

s

Internal source inductance

Measured from source lead 6 mm

-

7.5

-

nH

from package to source bond pad

February 1999

2

Rev 1.000

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