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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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J110 Datenblatt(PDF) 4 Page - NXP Semiconductors |
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J110 Datenblatt(HTML) 4 Page - NXP Semiconductors |
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4 / 7 page  1996 Jul 30 4 Philips Semiconductors Product specification N-channel silicon junction FETs J108; J109; J110 DYNAMIC CHARACTERISTICS Tj =25 °C; unless otherwise specified. Note 1. Test conditions for switching times are as follows: VDD = 1.5 V; VGS = 0 to VGSoff (all types) VGSoff = −12 V; RL = 100 Ω (J108) VGSoff = −7 V; RL = 100 Ω (J109) VGSoff = −5 V; RL = 100 Ω (J110). SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Cis input capacitance VDS = 0; VGS = −10 V; f = 1 MHz 15 30 pF VDS = 0; VGS = 0; f = 1 MHz; Tamb =25 °C 50 85 pF Crs reverse transfer capacitance VDS = 0; VGS = −10 V; f = 1 MHz 8 15 pF Switching times; see Fig.2 td delay time note 1 2 − ns ton turn-on time 4 − ns ts storage time 4 − ns toff turn-off time 6 − ns Fig.2 Switching circuit. handbook, halfpage MGE773 RL 50 Ω DUT SAMPLING SCOPE 50 Ω 50 Ω 0.1 µF 10 µF 10 nF VDD |
Ähnliche Teilenummer - J110 |
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Ähnliche Beschreibung - J110 |
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