J112 datasheet(4/6 Pages) PHILIPS

Teilenummer	J112

Bauteilbeschribung	N-channel silicon field-effect transistors

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Hersteller	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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4 / 6 page

July 1993

4

Philips Semiconductors

Product speciﬁcation

N-channel silicon ﬁeld-effect transistors

J111; J112; J113

DYNAMIC CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed

Input capacitance

VDS =0; −VGS = 10 V; f = 1 MHz

Cis

typ.

6 pF

VDS = −VGS = 0; f = 1 MHz

Cis

typ.

22 pF

max.

28 pF

Feedback capacitance

VDS =0; −VGS = 10 V; f = 1 MHz

Crs

typ.

3 pF

Switching times

test conditions

VDD = 10 V; VGS = 0 to VGSoff

−VGS off = 12 V; RL = 750 Ω for J111

−V

GS off =

7 V; RL = 1550 Ω for J112

−V

GS off =

5 V; RL = 3150 Ω for J113

Rise time

tr

typ.

6 ns

Turn-on time

ton

typ.

13 ns

Fall time

tf

typ.

15 ns

Turn-off time

toff

typ.

35 ns

Fig.2 Switching times test circuit.

ok, halfpage

MBK289

50

Ω

RL

DUT

10

µF

1

µF

VDD

10 nF

50

Ω

SAMPLING

SCOPE

50

Ω

Fig.3 Input and output waveforms.

MBK288

VGS off

toff

tf

VGS = 0 V

Vi

Vo

10%

90%

10%

ton

tr

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