2N1613L datasheet(1/2 Pages) MICROSEMI

Teilenummer	2N1613L

Bauteilbeschribung	NPN LOW POWER SILICON TRANSISTOR

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TECHNICAL DATA

NPN LOW POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/181

Devices

Qualified Level

2N718A

2N1613

2N1613L

JAN

JANTX

JANTXV

MAXIMUM RATINGS

Ratings

Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

30

Vdc

Collector-Base Voltage

VCBO

75

Vdc

Emitter-Base Voltage

VEBO

7.0

Vdc

Collector Current

IC

500

mAdc

Total Power Dissipation

@ TA = +25

0C (1)

2N718A

2N1613, L

@ TC = +25

0C (2)

2N718A

2N1613, L

PT

0.5

0.8

1.8

3.0

W

Operating & Storage Junction Temperature Range

TJ, Tstg

-55 to +175

0C

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max.

Unit

Thermal Resistance, Junction-to-Case

2N718A

2N1613, L

RθJC

97

58

0C/W

1) Derate linearly 4.57 mW/

0C for 2N1613, L and 2.85 mW/0C for 2N718A for TA > +250C

2) Derate linearly 17.2 mW/

0C for 2N1613, L and 10.3 mW/0C for 2N718A for TC > +250C

TO-18 (TO-206AA)*

2N718A

TO-39 (TO-205AD)*

2N1613

TO-5*

2N1613L

*See appendix A for package

outline

ELECTRICAL CHARACTERISTICS (TC = 25

0C unless otherwise noted)

Characteristics

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

IC = 30 mAdc

V(BR)CEO

30

Vdc

Collector-Emitter Breakdown Voltage

IC = 10 mAdc, RBE = 10 Ω

V(BR)CER

50

Vdc

Collector-Base Cutoff Current

VCB= 60 Vdc

ICBO

10

ηAdc

Emitter-Base Cutoff Current

VEB = 5.0 Vdc

IEBO

10

ηAdc

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 1 of 2

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