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LCE2009S Datenblatt(PDF) 3 Page - NXP Semiconductors |
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LCE2009S Datenblatt(HTML) 3 Page - NXP Semiconductors |
3 / 16 page 1997 Mar 03 3 Philips Semiconductors Product specification NPN microwave power transistors LBE2003S; LBE2009S; LCE2009S LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter 40 V VCER collector-emitter voltage LBE2003S RBE = 220 Ω− 35 V LBE2009S; LCE2009S RBE = 100 Ω− 35 V VCEO collector-emitter voltage open base − 16 V VEBO emitter-base voltage open collector − 3V IC collector current (DC) LBE2003S − 90 mA LBE2009S; LCE2009S − 250 mA Ptot total power dissipation Tmb ≤ 75 °C LBE2003S − 1.4 W LBE2009S; LCE2009S − 3.5 W Tstg storage temperature −65 +150 °C Tj operating junction temperature − 200 °C Tsld soldering temperature at 0.3 mm from case; t = 10 s − 235 °C Tmb ≤ 75 °C. (1) Region of permissible DC operation. (2) Permissible extension provided RBE ≤ 220 Ω. (3) Second breakdown limit (independent of temperature). Fig.3 DC SOAR; LBE2003S. handbook, halfpage 102 10 IC (mA) 1 (1) (2) (3) MGD996 10 VCE (V) 15 20 30 40 60 100 Fig.4 Power dissipation derating as a function of mounting-base temperature; LBE2003S. handbook, halfpage −50 0 200 2 1.5 0.5 0 1 50 100 150 MGD989 Tmb ( oC) Ptot (W) LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15 |
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