Datenblatt-Suchmaschine für elektronische Bauteile
  German  ▼
ALLDATASHEETDE.COM

X  

AM29PDL640G83WHI Datenblatt(PDF) 4 Page - Advanced Micro Devices

Teilenummer AM29PDL640G83WHI
Bauteilbeschribung  64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIOTM Control
Download  61 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Hersteller  AMD [Advanced Micro Devices]
Direct Link  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29PDL640G83WHI Datenblatt(HTML) 4 Page - Advanced Micro Devices

  AM29PDL640G83WHI Datasheet HTML 1Page - Advanced Micro Devices AM29PDL640G83WHI Datasheet HTML 2Page - Advanced Micro Devices AM29PDL640G83WHI Datasheet HTML 3Page - Advanced Micro Devices AM29PDL640G83WHI Datasheet HTML 4Page - Advanced Micro Devices AM29PDL640G83WHI Datasheet HTML 5Page - Advanced Micro Devices AM29PDL640G83WHI Datasheet HTML 6Page - Advanced Micro Devices AM29PDL640G83WHI Datasheet HTML 7Page - Advanced Micro Devices AM29PDL640G83WHI Datasheet HTML 8Page - Advanced Micro Devices AM29PDL640G83WHI Datasheet HTML 9Page - Advanced Micro Devices Next Button
Zoom Inzoom in Zoom Outzoom out
 4 / 61 page
background image
2
Am29PDL640G
December 13, 2005
D A TA SH EE T
GENERAL DESCRIPTION
The Am29PDL640G is a 64 Mbit, 3.0 volt-only Page Mode
and Simultaneous Read/Write Flash memory device orga-
nized as 4 Mwords. The device is offered in 63- or 80-ball
Fine-pitch BGA packages. The word-wide data (x16) ap-
pears on DQ15-DQ0. This device can be programmed
in-system or in standard EPROM programmers. A 12.0 V
VPP is not required for write or erase operations.
The device offers fast page access times of 25, 30, and 45
ns, with corresponding random access times of 65, 70, 85,
and 90 ns, respectively, allowing high speed microproces-
sors to operate without wait states. To eliminate bus conten-
tion the device has separate chip enable (CE#), write enable
(WE#) and output enable (OE#) controls.
Simultaneous Read/Write Operation with
Zero Latency
The Simultaneous Read/Write architecture provides simul-
taneous operation by dividing the memory space into 4
banks, which can be considered to be four separate memory
arrays as far as certain operations are concerned. The de-
vice can improve overall system performance by allowing a
host system to program or erase in one bank, then immedi-
ately and simultaneously read from another bank with zero
latency (with two simultaneous operations operating at any
one time). This releases the system from waiting for the
completion of a program or erase operation, greatly improv-
ing system performance.
The device can be organized in both top and bottom sector
configurations. The banks are organized as follows:
Page Mode Features
The device is AC timing, input/output, and package compat-
ible with 4 Mbit x16 page mode mask ROM. The page size
is 8 words.
After initial page access is accomplished, the page mode op-
eration provides fast read access speed of random locations
within that page.
Standard Flash Memory Features
The device requires a single 3.0 volt power supply (2.7 V
to 3.1 V) for both read and write functions. Internally gener-
ated and regulated voltages are provided for the program
and erase operations.
The device is entirely command set compatible with the
JEDEC 42.4 single-power-supply Flash standard. Com-
mands are written to the command register using standard
microprocessor write timing. Register contents serve as in-
puts to an internal state-machine that controls the erase and
programming circuitry. Write cycles also internally latch ad-
dresses and data needed for the programming and erase
operations. Reading data out of the device is similar to read-
ing from other Flash or EPROM devices.
Device programming occurs by executing the program com-
mand sequence. The Unlock Bypass mode facilitates faster
programming times by requiring only two write cycles to pro-
gram data instead of four. Device erasure occurs by execut-
ing the erase command sequence.
The host system can detect whether a program or erase op-
eration is complete by reading the DQ7 (Data# Polling) and
DQ6 (toggle) status bits. After a program or erase cycle has
been completed, the device is ready to read array data or ac-
cept another command.
The sector erase architecture allows memory sectors to be
erased and reprogrammed without affecting the data con-
tents of other sectors. The device is fully erased when
shipped from the factory.
Hardware data protection measures include a low VCC de-
tector that automatically inhibits write operations during
power transitions. The hardware sector protection feature
disables both program and erase operations in any combina-
tion of sectors of memory. This can be achieved in-system or
via programming equipment.
The Erase Suspend/Erase Resume feature enables the
user to put erase on hold for any period of time to read data
from, or program data to, any sector that is not selected for
erasure. True background erase can thus be achieved. If a
read is needed from the SecSi Sector area (One Time Pro-
gram area) after an erase suspend, then the user must use
the proper command sequence to enter and exit this region.
The device offers two power-saving features. When ad-
dresses have been stable for a specified amount of time, the
device enters the automatic sleep mode. The system can
also place the device into the standby mode. Power con-
sumption is greatly reduced in both these modes.
AMD’s Flash technology combined years of Flash memory
manufacturing experience to produce the highest levels of
quality, reliability and cost effectiveness. The device electri-
cally erases all bits within a sector simultaneously via
Fowler-Nordheim tunneling. The data is programmed using
hot electron injection.
Bank
Sectors
A
8 Mbit (4 Kw x 8 and 32 Kw x 15)
B
24 Mbit (32 Kw x 48)
C
24 Mbit (32 Kw x 48)
D
8 Mbit (4 Kw x 8 and 32 Kw x 15)


Ähnliche Teilenummer - AM29PDL640G83WHI

HerstellerTeilenummerDatenblattBauteilbeschribung
logo
SPANSION
AM29PDL640G SPANSION-AM29PDL640G Datasheet
1Mb / 61P
   64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control
More results

Ähnliche Beschreibung - AM29PDL640G83WHI

HerstellerTeilenummerDatenblattBauteilbeschribung
logo
SPANSION
AM29PDL640G SPANSION-AM29PDL640G Datasheet
1Mb / 61P
   64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control
logo
Advanced Micro Devices
AM29PDL127H AMD-AM29PDL127H Datasheet
991Kb / 68P
   128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIOTM Control
AM29PDL128G AMD-AM29PDL128G Datasheet
628Kb / 71P
   128 Megabit (8 M x 16-Bit/4 M x 32-Bit) CMOS 3.0 Volt-only, Simultaneous Read/ Write Flash Memory with VersatileIOTM Control
AM29DL640D AMD-AM29DL640D Datasheet
1Mb / 54P
   64 Megabit CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
AM29DL640G AMD-AM29DL640G Datasheet
1Mb / 52P
   64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
logo
SPANSION
AM29DL640H SPANSION-AM29DL640H_05 Datasheet
1Mb / 54P
   64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
S29JL064H SPANSION-S29JL064H Datasheet
1Mb / 64P
   64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
logo
Eon Silicon Solution In...
EN29PL064 EON-EN29PL064_11 Datasheet
778Kb / 57P
   64 Mbit (4 M x 16-Bit) CMOS 3.0 Volt- only, Simultaneous-Read/Write Flash Memory
logo
Advanced Micro Devices
AM29DL640D AMD-AM29DL640D_05 Datasheet
1Mb / 54P
   64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
logo
SPANSION
AM29DL640G SPANSION-AM29DL640G_05 Datasheet
1Mb / 56P
   64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61


Datenblatt Download

Go To PDF Page


Link URL




Privatsphäre und Datenschutz
ALLDATASHEETDE.COM
War ALLDATASHEET hilfreich?  [ DONATE ] 

Über Alldatasheet   |   Werbung   |   Kontakt   |   Privatsphäre und Datenschutz   |   Linktausch   |   Hersteller
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com