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FCA16N60 Datenblatt(PDF) 2 Page - Fairchild Semiconductor

Teilenummer FCA16N60
Bauteilbeschribung  600V N-Channel MOSFET
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Hersteller  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FCA16N60 Datenblatt(HTML) 2 Page - Fairchild Semiconductor

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FCA16N60 REV. A1
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FCA16N60
FCA16N60
TO-3P
-
-
30
FCA16N60
FCA16N60_F109
TO-3PN
-
-
30
Electrical Characteristics T
C = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min
Typ
Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250μA, TJ = 25°C
600
--
--
V
VGS = 0V, ID = 250μA, TJ = 150°C
--
650
--
V
ΔBVDSS
/
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250μA, Referenced to 25°C
--
0.6
--
V/
°C
BVDS
Drain-Source Avalanche Breakdown
Voltage
VGS = 0V, ID = 16A
--
700
--
V
IDSS
Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V
VDS = 480V, TC = 125°C
--
--
--
--
1
10
μA
μA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30V, VDS = 0V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30V, VDS = 0V
--
--
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250μA
3.0
--
5.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10V, ID = 8A
--
0.22
0.26
Ω
gFS
Forward Transconductance
VDS = 40V, ID = 8A
(Note 4)
--
11.5
--
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
1730
2250
pF
Coss
Output Capacitance
--
960
1150
pF
Crss
Reverse Transfer Capacitance
--
85
--
pF
Coss
Output Capacitance
VDS = 480V, VGS = 0V, f = 1.0MHz
--
45
60
pF
Coss eff.
Effective Output Capacitance
VDS = 0V to 400V, VGS = 0V
--
110
--
pF
Switching Characteristics
td(on)
Turn-On Delay Time
VDD = 300V, ID = 16A
RG = 25Ω
(Note 4, 5)
--
42
85
ns
tr
Turn-On Rise Time
--
130
270
ns
td(off)
Turn-Off Delay Time
--
165
340
ns
tf
Turn-Off Fall Time
--
90
190
ns
Qg
Total Gate Charge
VDS = 480V, ID = 16A
VGS = 10V
(Note 4, 5)
--
55
70
nC
Qgs
Gate-Source Charge
--
10.5
13
nC
Qgd
Gate-Drain Charge
--
28
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
16
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
48
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0V, IS = 16A
--
--
1.4
V
trr
Reverse Recovery Time
VGS = 0V, IS = 16A
dIF/dt =100A/μs
(Note 4)
--
435
--
ns
Qrr
Reverse Recovery Charge
--
7.0
--
μC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 8A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 16A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width
≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics


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