FDC602P datasheet(1/5 Pages) FAIRCHILD

Teilenummer	FDC602P

Bauteilbeschribung	P-Channel 2.5V PowerTrench Specified MOSFET

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Hersteller	FAIRCHILD [Fairchild Semiconductor]

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April 2001

FDC602P Rev C(W)

FDC602P

P-Channel 2.5V PowerTrench®

® Specified MOSFET

General Description

This P-Channel 2.5V specified MOSFET uses a rugged

gate version of Fairchild’s advanced PowerTrench

process. It has been optimized for power management

applications with a wide range of gate drive voltage

(2.5V – 12V).

Applications

• Battery management

• Load switch

• Battery protection

Features

• –5.5 A, –20 V

RDS(ON) = 35 m

Ω @ VGS = –4.5 V

RDS(ON) = 50 m

Ω @ VGS = –2.5 V

• Fast switching speed

• High performance trench technology for extremely

low RDS(ON)

D

S

D

G

SuperSOT -6

TM

6

5

4

1

2

3

Absolute Maximum Ratings T

A=25

oC unless otherwise noted

Symbol

Parameter

Ratings

Units

VDSS

Drain-Source Voltage

–20

V

VGSS

Gate-Source Voltage

±12

V

ID

Drain Current

– Continuous

(Note 1a)

–5.5

A

– Pulsed

–20

Maximum Power Dissipation

(Note 1a)

1.6

W

PD

(Note 1b)

0.8

TJ, TSTG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

RθJA

Thermal Resistance, Junction-to-Ambient

(Note 1a)

78

°C/W

RθJC

Thermal Resistance, Junction-to-Case

(Note 1)

30

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

.602

FDC602P

7’’

8mm

3000 units

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