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IRF5210LPBF Datenblatt(PDF) 2 Page - International Rectifier

Teilenummer IRF5210LPBF
Bauteilbeschribung  HEXFET Power MOSFET
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Hersteller  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF5210LPBF Datenblatt(HTML) 2 Page - International Rectifier

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Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11)
‚ Starting TJ= 25°C, L = 0.46mH
RG = 25Ω, IAS = -23A. (See Figure 12)
ƒ ISD ≤ -23A, di/dt ≤ -650A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C.
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… When mounted on 1" square PCB (FR-4or G-10
Material). For recommended footprint and soldering
techniques refer to application note #AN-994.
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage-100
–––
–––
V
∆ΒVDSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
-0.11
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
–––
60
m
VGS(th)
Gate Threshold Voltage-2.0
–––
-4.0
V
gfs
Forward Transconductance
9.5
–––
–––
S
IDSS
Drain-to-Source Leakage Current
–––
–––
-50
µA
–––
–––
-250
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage–––
–––
-100
Qg
Total Gate Charge
–––
150
230
nC
Qgs
Gate-to-Source Charge
–––
22
33
Qgd
Gate-to-Drain ("Miller") Charge–––
81
120
td(on)
Turn-On Delay Time
–––
14
–––
ns
tr
Rise Time
–––
63
–––
td(off)
Turn-Off Delay Time
–––
72
–––
tf
Fall Time
–––
55
–––
LD
Internal Drain Inductance
–––
4.5
–––
nH
Between lead,
6mm (0.25in.)
LS
Internal Source Inductance
–––
7.5
–––
from package
and center of die contact
Ciss
Input Capacitance
–––
2780
–––
pF
Coss
Output Capacitance
–––
800
–––
Crss
Reverse Transfer Capacitance
–––
430
–––
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
-38
(Body Diode)
A
ISM
Pulsed Source Current
–––
–––
-140
(Body Diode)
Ù
VSD
Diode Forward Voltage
–––
–––
-1.6
V
trr
Reverse Recovery Time
–––
170
260
ns
Qrr
Reverse Recovery Charge
–––
1180 1770
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
VDS = VGS, ID = -250µA
VDS = -100V, VGS = 0V
VDS = -80V, VGS = 0V, TJ = 125°C
Conditions
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA
VGS = 10V, ID = -38A
f
TJ = 25°C, IF = -23A, VDD = -25V
di/dt = -100A/µs
f
TJ = 25°C, IS = -23A, VGS = 0V f
showing the
integral reverse
p-n junction diode.
VGS = -10V f
MOSFET symbol
VGS = 0V
VDS = -25V
Conditions
ƒ = 1.0MHz, See Fig. 5
RG = 2.4Ω
ID = -23A
VDS = -50V, ID = -23A
VDD = -50V
ID = -23A
VGS = 20V
VGS = -20V
VDS = -80V
VGS = -10V f


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