Datenblatt-Suchmaschine für elektronische Bauteile |
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IRFP260NPBF Datenblatt(PDF) 4 Page - International Rectifier |
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IRFP260NPBF Datenblatt(HTML) 4 Page - International Rectifier |
4 / 8 page IRFP260NPbF 4 www.irf.com Fig 7. Typical Source-Drain Diode Forward Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1 10 100 1000 1 10 100 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) Single Pulse T T = 175 C = 25 C ° ° J C V , Drain-to-Source Voltage (V) DS 10us 100us 1ms 10ms Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1 10 100 1000 VDS, Drain-to-Source Voltage (V) 0 1000 2000 3000 4000 5000 6000 7000 8000 Coss Crss Ciss VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 0 50 100 150 200 0 4 8 12 16 Q , Total Gate Charge (nC) G I = D 28A V = 40V DS V = 100V DS V = 160V DS 0.1 1 10 100 1000 0.2 0.6 1.0 1.4 1.8 2.2 V ,Source-to-Drain Voltage (V) SD V = 0 V GS T = 25 C J ° T = 175 C J ° |
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