2N2484_1 datasheet(2/2 Pages) MICROSEMI

Teilenummer	2N2484

Bauteilbeschribung	NPN SILICON LOW POWER TRANSISTOR

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Hersteller	MICROSEMI [Microsemi Corporation]

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2N2484 JAN SERIES

ELECTRICAL CHARACTERISTICS (con’t)

Characteristics

Symbol

Min.

Max.

Unit

ON CHARACTERISTICS (3)

Forward-Current Transfer Ratio

IC = 1.0 µAdc, VCE = 5.0 Vdc

IC = 10 µAdc, VCE = 5.0 Vdc

IC = 100 µAdc, VCE = 5.0 Vdc

IC = 500 µAdc, VCE = 5.0 Vdc

IC = 1.0 mAdc, VCE = 5.0 Vdc

IC = 10 mAdc, VCE = 5.0 Vdc

hFE

45

200

225

250

225

500

675

800

Collector-Emitter Saturation Voltage

IC = 1.0 mAdc, IB = 100 µAdc

VCE(sat)

0.3

Vdc

Base-Emitter Voltage

VCE = 5.0 Vdc, IC = 100 µAdc

VBE

0.5

0.7

Vdc

DYNAMIC CHARACTERISTICS

Forward Current Transfer Ratio

IC = 50 µAdc, VCE = 5.0 Vdc, f = 5.0 MHz

IC = 500 µAdc, VCE = 5.0 Vdc, f = 30 MHz

h

fe



3.0

2.0

7.0

Open Circuit Output Admittance

IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz

hoe

40

µmhos

Open Circuit Reverse-Voltage Transfer Ratio

IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz

hre

8.0x10

-4

Input Impedance

IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz

hie

3.5

24

k

Ω

Small-Signal Short-Circuit Forward Current Transfer Ratio

IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz

hfe

250

900

Output Capacitance

VCB = 5.0 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz

Cobo

5.0

pF

Input Capacitance

VEB = 0.5 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz

Cibo

6.0

pF

(3) Pulse Test: Pulse Width = 300

µs, Duty Cycle ≤ 2.0%.

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 2 of 2

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