Datenblatt-Suchmaschine für elektronische Bauteile |
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FDD6672A Datenblatt(PDF) 4 Page - Fairchild Semiconductor |
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FDD6672A Datenblatt(HTML) 4 Page - Fairchild Semiconductor |
4 / 5 page FDD6672A Rev C(W) Typical Characteristics 0 1 2 3 4 5 0 102030 40 Qg, GATE CHARGE (nC) I D = 12.5A VDS = 5V 15V 10V 0 2000 4000 6000 8000 0 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) CISS CRSS C OSS f = 1MHz V GS = 0 V Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 0.01 0.1 1 10 100 1000 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) DC 10s 1s 100ms 100µs RDS(ON) LIMIT VGS = 4.5V SINGLE PULSE RθJA = 96 oC/W TA = 25 oC 10ms 1ms 0 20 40 60 80 100 0.01 0.1 1 10 100 1000 t1, TIME (sec) SINGLE PULSE RθJA = 96 °C/W TA = 25°C Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) RθJA(t) = r(t) + RθJA = 96 °C/W TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 P(pk) t1 t2 SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 D = 0.5 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. |
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