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2N7371 Datenblatt(PDF) 2 Page - Microsemi Corporation

Teilenummer 2N7371
Bauteilbeschribung  PNP DARLINGTON HIGH POWER SILICON TRANSISTOR
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Hersteller  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

2N7371 Datenblatt(HTML) 2 Page - Microsemi Corporation

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2N7371 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
(2)
Forward-Current Transfer Ratio
IC = 6.0 Adc, VCE = 3.0 Vdc
IC = 12 Adc, VCE = 3.0 Vdc
hFE
1,000
150
18,000
Collector-Emitter Saturation Voltage
IC = 12 Adc, IB = 120 mAdc
VCE(sat)
3.0
Vdc
Base-Emitter Saturation Voltage
IC = 12 Adc, IB = 120 mAdc
VBE(sat)
4.0
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 5.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz
h
fe
10
250
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 30 Vdc; IC = 12 Adc; IB1 = 120 mAdc
ton
2.0
µs
Turn-Off Time
VCC = 30 Vdc; IC = 12 Adc; IB1 = IB2 = 120 mAdc
toff
10
µs
SAFE OPERATING AREA
DC Tests
TC = +25
0C, 1 Cycle, t
≥ 1.0 s
Test 1
VCE = 8.3 Vdc, IC = 12 Adc
Test 2
VCE = 30 Vdc, IC = 3.3 Adc
Test 3
VCE = 90 Vdc, IC = 150 mAdc
(2) Pulse Test: Pulse Width = 300
µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2


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