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FDS3580 Datenblatt(PDF) 2 Page - Fairchild Semiconductor

Teilenummer FDS3580
Bauteilbeschribung  80V N-Channel PowerTrench MOSFET
Download  5 Pages
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Hersteller  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDS3580 Datenblatt(HTML) 2 Page - Fairchild Semiconductor

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FDS3580 Rev. C
Electrical Characteristics
T
A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Drain-Source Avalanche Ratings (Note 2)
WDSS
Single Pulse Drain-Source
Avalanche Energy
VDD = 40 V, ID = 7.6 A
245
mJ
IAR
Maximum Drain-Source Avalanche Current
7.6
A
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
80
V
∆BVDSS
∆T
J
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
81
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 64 V, VGS = 0 V
1
µA
IGSSF
Gate-Body Leakage, Forward
VGS = 20 V, VDS = 0 V
100
nA
IGSSR
Gate-Body Leakage, Reverse
VGS = -20 V, VDS = 0 V
-100
nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
22.5
4
V
∆VGS(th)
∆T
J
Gate Threshold Voltage
Temperature Coefficient
ID = 250 µA, Referenced to 25°C
-7
mV/°C
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 7.6 A
VGS = 10 V, ID = 7.6 A, TJ=125°C
VGS = 6 V, ID = 7 A
0.022
0.037
0.024
0.029
0.055
0.033
ID(on)
On-State Drain Current
VGS = 10 V, VDS = 5 V
30
A
gFS
Forward Transconductance
VDS = 5 V, ID = 7.6 A
28
S
Dynamic Characteristics
Ciss
Input Capacitance
1800
pF
Coss
Output Capacitance
180
pF
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
90
pF
Switching Characteristics (Note 2)
td(on)
Turn-On Delay Time
13
26
ns
tr
Turn-On Rise Time
8
20
ns
td(off)
Turn-Off Delay Time
34
60
ns
tf
Turn-Off Fall Time
VDD = 40 V, ID = 1 A,
VGS = 10 V, RGEN = 6 Ω
16
30
ns
Qg
Total Gate Charge
34
46
nC
Qgs
Gate-Source Charge
6.1
nC
Qgd
Gate-Drain Charge
VDS = 40 V, ID = 7.6 A,
VGS = 10 V
6.9
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
2.1
A
VSD
Drain-Source Diode Forward VoltageVGS = 0 V, IS = 2.1 A
(Note 2)
0.74
1.2
V
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width
≤ 300 µs, Duty Cycle ≤ 2.0%
a) 50
° C/W when
mounted on a 1 in2
pad of 2 oz. copper.
b) 105
° C/W when
mounted on a 0.04 in2
pad of 2 oz. copper.
c) 125
° C/W when
mounted on a minimum
pad.


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