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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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IRF7469PBF Datenblatt(PDF) 2 Page - International Rectifier |
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IRF7469PBF Datenblatt(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRF7469PbF 2 www.irf.com Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 17 ––– ––– S VDS = 20V, ID = 7.2A Qg Total Gate Charge ––– 15 23 ID = 7.2A Qgs Gate-to-Source Charge ––– 7.0 11 nC VDS = 20V Qgd Gate-to-Drain ("Miller") Charge ––– 5.0 8.0 VGS = 4.5V Qoss Output Gate Charge ––– 16 24 VGS = 0V, VDS = 16V td(on) Turn-On Delay Time ––– 11 ––– VDD = 20V tr Rise Time ––– 2.2 ––– ID = 7.2A td(off) Turn-Off Delay Time ––– 14 ––– RG = 1.8Ω tf Fall Time ––– 3.5 ––– VGS = 4.5V Ciss Input Capacitance ––– 2000 ––– VGS = 0V Coss Output Capacitance ––– 480 ––– VDS = 20V Crss Reverse Transfer Capacitance ––– 28 ––– pF ƒ = 1.0MHz Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. ––– 0.80 1.3 V TJ = 25°C, IS = 7.2A, VGS = 0V ––– 0.65 ––– TJ = 125°C, IS = 7.2A, VGS = 0V trr Reverse Recovery Time ––– 47 71 ns TJ = 25°C, IF = 7.2A, VR=15V Qrr Reverse Recovery Charge ––– 91 140 nC di/dt = 100A/µs trr Reverse Recovery Time ––– 77 120 ns TJ = 125°C, IF = 7.2A, VR=20V Qrr Reverse Recovery Charge ––– 150 230 nC di/dt = 100A/µs Dynamic @ TJ = 25°C (unless otherwise specified) ns Symbol Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 210 mJ IAR Avalanche Current ––– 7.2 A Avalanche Characteristics S D G Diode Characteristics 2.3 73 A VSD Diode Forward Voltage Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.04 ––– V/°C Reference to 25°C, ID = 1mA ––– 12 17 VGS = 10V, ID = 9.0A ––– 15.5 21 VGS = 4.5V, ID = 7.2A VGS(th) Gate Threshold Voltage 1.0 ––– 3.0 V VDS = VGS, ID = 250µA ––– ––– 20 µA VDS = 32V, VGS = 0V ––– ––– 100 VDS = 32V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 200 VGS = 16V Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -16V Static @ TJ = 25°C (unless otherwise specified) IGSS IDSS Drain-to-Source Leakage Current RDS(on) Static Drain-to-Source On-Resistance m Ω |
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