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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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SS8050 Datenblatt(PDF) 1 Page - Fairchild Semiconductor |
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SS8050 Datenblatt(HTML) 1 Page - Fairchild Semiconductor |
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©2004 Fairchild Semiconductor Corporation Rev. B2, August 2004 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T a=25°C unless otherwise noted Electrical Characteristics T a=25°C unless otherwise noted hFE Classification Symbol Parameter Ratings Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current 1.5 A PC Collector Power Dissipation 1 W TJ Junction Temperature 150 °C TSTG Storage Temperature -65 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC=100µA, IE=0 40 V BVCEO Collector-Emitter Breakdown Voltage IC=2mA, IB=0 25 V BVEBO Emitter-Base Breakdown Voltage IE=100µA, IC=0 6 V ICBO Collector Cut-off Current VCB=35V, IE=0 100 nA IEBO Emitter Cut-off Current VEB=6V, IC=0 100 nA hFE1 hFE2 hFE3 DC Current Gain VCE=1V, IC=5mA VCE=1V, IC=100mA VCE=1V, IC=800mA 45 85 40 300 VCE (sat) Collector-Emitter Saturation Voltage IC=800mA, IB=80mA 0.5 V VBE (sat) Base-Emitter Saturation Voltage IC=800mA, IB=80mA 1.2 V VBE (on) Base-Emitter On Voltage VCE=1V, IC=10mA 1 V Cob Output Capacitance VCB=10V, IE=0, f=1MHz 9.0 pF fT Current Gain Bandwidth Product VCE=10V, IC=50mA 100 MHz Classification B C D hFE2 85 ~ 160 120 ~ 200 160 ~ 300 SS8050 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. • Complimentary to SS8550 • Collector Current: IC=1.5A • Collector Power Dissipation: PC=2W (TC=25°C) 1. Emitter 2. Base 3. Collector TO-92 1 |
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