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IRF9Z30PbF

03/27/07

geometry and unique processing of the HEXFET design achieve very low on-state resistence combined with high

transconductance and extreme device ruggedness.

The P-Channel HEXFETs are designed for applications which require the convenience of reverse polarity operation. They

retain all of the features of the more common N-Channel HEXFETs such as voltage control, very fast switching, ease of

paralleling, and excellent temperature stability.

P-Channel HEXFETs are intended for use in power stages where complementary symmetry with N-Channel devices offers

circuit simplification. They are also very useful in drive stages because of the circuit versatility offered by the reverse polarity

connection. Applications include motor control, audio amplifiers, switched mode converters, control circuit and pulse

amplifiers.

S

D

G

TO-220AB

P-Channel Verasatility

Compact Plastic Package

Fast Switching

Low Drive Current

Ease of Paralleling

Excellent Temperature Stability

Lead-Free

Product Summary

Part Number

IRF9Z30PbF

-50

0.14

-18

Description

Absolute Maximum Ratings

Parameter

Max.

Units

Drain-to-Source Voltage

-50

-50

Gate-to-Source Voltage

±20

-18

-11

Pulsed Drain Current

-60

Max. Power Dissipation

74

W

Linear Derating Factor

0.59

W/°C

Inductive Current, Clamped (L= 100

µH) See Fig. 14

-60

Unclamped Inductive Current(Avalanche Current)

See Fig. 15

-3.1

Operating Junction and

Storage Temperature Range

Lead Temperature

V

A

-55 to + 150

A

°C

300 (0.063 in. (1.6mm) from case for 10s)

Thermal Resistance

Parameter

Typ.

Max.

Units

Junction-to-Case

–––

1.7

Case-to-Sink, Flat, Greased Surface

1.0

–––

°C/W

Junction-to-Ambient

–––

80

Features

PD- 96095