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CDCE401 Datenblatt(PDF) 11 Page - Texas Instruments

Teilenummer CDCE401
Bauteilbeschribung  OSCILLATOR IC WITH ELECTRONIC CALIBRATION
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Hersteller  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

CDCE401 Datenblatt(HTML) 11 Page - Texas Instruments

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ABSOLUTE MAXIMUM RATINGS
RECOMMENDED OPERATING CONDITIONS
TIMING REQUIREMENTS
CDCE401
SCAS820 – JUNE 2006
over operating free-air temperature range (unless otherwise noted)(1)
VALUE
UNIT
VDD
Supply voltage range
–0.5 to 8
V
VI
Input voltage range(2)
–0.5 to VDD + 0.5
V
VO
Output voltage range(2)
–0.5 to VDD + 0.5
V
Input current (VI < 0, VI > VDD)
±20
mA
IO
Continuous output current
±50
mA
θ
JA
Package thermal impedance:(3) QFN8 package
TBD
K/W
Tstg
Storage temperature range
–65 to 150
°C
(1)
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
The input and output negative voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
(3)
The package thermal impedance is calculated in accordance with JESD 51 (no-airflow condition) and JEDEC2S2P (high-k board).
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
SUPPLY VOLTAGES, CURRENTS AND TEMPERATURE RANGE
Supply voltage: the four target supply-voltage ranges are:
a) 2.5 V ±10% = 2.25 V–2.75 V
VDD
b) 2.8 V ±10% = 2.52 V–3.08 V
2.25
3
3.3
V
c) 2.85 V ±10%= =2.56 V–3.14 V
d) 3 V ±10% = 2.7 V–3.30 V
VDD
Supply voltage during configuration of the device and EEPROM writing
3.1
3.2
3.3
V
IDD
Supply current
fCLOCK-max = 100 MHz, VDD-max =
20
mA
3.3 V, CL-max = 15 pF
IDD(DIS)
Disable current
fIN = 0 MHz, VDD-max
10
µA
TA
Operating free-air temperature
–40
85
°C
LVCMOS INPUT PARAMETER (SDATA, EN)
VIH
High-level input voltage
VDD = 3.3 V
VDD – 0.5
VDD + 0.3
V
VIL
Low-level input voltage
VDD = 3.3 V
VSS – 0.3
VSS + 0.5
V
RPULLUP
Pullup resistor (EN and SDATA)
1.4
2
3.5
M
LVCMOS OUTPUT PARAMETER (FOUT)
VOH
High-level output voltage
IOH = –6 mA
VDD – 0.3
V
VOL
Low-level output voltage
IOL = 6 mA
VSS + 0.3
V
VOH_12mA
High-level output voltage
IOH = –12 mA
VDD – 0.6
V
VOL_12mA
Low-level output voltage
IOL = 12 mA
VSS + 0.6
V
IOZH/IOZL
Output current in high-impedance state
VOUT = VDD and VOUT = VSS
±10
µA
over recommended ranges of supply voltage, load, and operating free-air temperature
PARAMETER
MIN
NOM
MAX
UNIT
XIN/XOUT REQUIREMENTS
fCLK_IN
Crystal frequency
20
100
MHz
fRange
Trimming range (range is dependent on connected crystal)
±20
ppm
OG0 = 1
OG1 = 1
33
OG0 = 1
OG1 = 0
30
Base input capacitance into XIN, measured
CBASE_XIN
pF
single-ended with all CXx turned off
OG0 = 0
OG1 = 1
27
OG0 = 0
OG1 = 0
25
11
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