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CDBU0230L Datenblatt(PDF) 1 Page - Comchip Technology

Teilenummer CDBU0230L
Bauteilbeschribung  SMD Schottky Barrier Diode
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Hersteller  COMCHIP [Comchip Technology]
Direct Link  http://www.comchiptech.com
Logo COMCHIP - Comchip Technology

CDBU0230L Datenblatt(HTML) 1 Page - Comchip Technology

  CDBU0230L Datasheet HTML 1Page - Comchip Technology CDBU0230L Datasheet HTML 2Page - Comchip Technology  
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Io = 200 mA
VR = 30 Volt s
CDBU0230L
SMD Schottky Barrier Diode
SMD Schottky Barrier Diode
(Lead-free Device)
Unit
V
uA
Parameter
Forward voltage
Reverse current
Conditions
I F = 200 mA
VR = 10 V
Symbol
VF
IR
Min Typ Max
0.5
30
Electrical Characteristics ( at T A = 25 C unless otherwise noted )
8.3 ms single half sine-wave superimposed
on rate load ( JEDEC method )
Max
35
30
200
1
+125
+125
Typ
Min
-40
-40
Parameter
Reverse voltage
Forward current , surge peak
Storage temperature
Junction temperature
Repetitive peak reverse voltage
Average forward rectified current
Conditions
Symbol
VRRM
VR
Io
IFSM
TSTG
T j
Unit
V
V
mA
A
C
C
Maximum Rating ( at T A = 25 C unless otherwise noted )
SMD Diodes Specialist
COMCHIP
Page 1
REV:A
QW-A1025
Features
Low forward Voltage
Designed for mounting on small surface.
Extremely thin/leadless package.
Majority carrier conduction.
Mechanical data
Case: SOD-523F (1608) Standard
package , molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750, method 2026.
Polarity: Indicated by cathode band.
Mounting position: Any.
Weight: 0.003 gram (approximately).
0.071(1.80)
0.063(1.60)
0.014(0.35) Typ.
0.039(1.00)
0.031(0.80)
0.033(0.85)
0.027(0.70)
Dimensions in inches and (millimeter)
0603(1608)
0.012 (0.30) Typ.
0.018(0.45) Typ.


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