Datenblatt-Suchmaschine für elektronische Bauteile |
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NE33284A-T1 Datenblatt(PDF) 1 Page - NEC |
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NE33284A-T1 Datenblatt(HTML) 1 Page - NEC |
1 / 5 page NE33284A FEATURES • VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz • HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm • LOW COST METAL/CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE PART NUMBER NE33284A PACKAGE OUTLINE 84AS SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX NFOPT1 Optimum Noise Figure, VDS = 2.0 V, IDS = 10 mA, f = 12 GHz dB 0.75 1.0 f = 4 GHz dB 0.35 0.45 GA1 Associated Gain, VDS = 2.0 V, IDS = 10 mA, f = 12 GHz dB 9.5 10.5 f = 4 GHz dB 13.0 15.0 P1dB Output Power at 1 dB Gain Compression Point, f = 12 GHz VDS = 2.0 V, IDS = 10 mA dBm 11.2 VDS = 2.0 V, IDS = 20 mA dBm 12.0 G1dB Gain at P1dB, f = 12 GHz VDS = 2.0 V, IDS = 10 mA dB 10.8 VDS = 2.0 V, IDS = 20 mA dB 11.0 IDSS Saturated Drain Current, VDS = 2.0 V,VGS = 0 V mA 15 40 80 VP Pinch-off Voltage, VDS = 2.0 V, IDS = 0.1 mA V -2.0 -0.8 -0.2 gm Transconductance, VDS = 2.0 V, ID = 10 mA mS 45 70 IGSO Gate to Source Leakage Current, VGS = -3.0 V µA 0.5 10.0 RTH (CH-A) Thermal Resistance (Channel to Ambient) °C/W 630 RTH (CH-C)2 Thermal Resistance (Channel to Case) °C/W 280 310 ELECTRICAL CHARACTERISTICS (TA = 25°C) DESCRIPTION The NE33284A is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also results in lower noise figure and high associated gain. This device is housed in an epoxy-sealed, metal/ceramic package and is intended for high volume consumer and industrial applications. Notes: 1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line as a "go-no-go" screening tuned for the "generic" type but not for each specimen. 2. RTH (channel to case) for package mounted on an infinite heat sink. NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA Frequency, f (GHz) SUPER LOW NOISE HJ FET California Eastern Laboratories 1 10 20 0 0.2 0.4 0.6 0.8 1.2 1.4 NF GA 24 21 18 15 12 9 6 3 1 |
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