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NE33284A-T1 Datenblatt(PDF) 1 Page - NEC

Teilenummer NE33284A-T1
Bauteilbeschribung  SUPER LOW NOISE HJ FET
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Hersteller  NEC [NEC]
Direct Link  http://www.nec.com/
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NE33284A-T1 Datenblatt(HTML) 1 Page - NEC

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NE33284A
FEATURES
• VERY LOW NOISE FIGURE:
0.8 dB typical at 12 GHz
• HIGH ASSOCIATED GAIN:
10.5 dB Typical at 12 GHz
• GATE LENGTH: 0.3
µm
• GATE WIDTH: 280
µm
• LOW COST METAL/CERAMIC PACKAGE
• TAPE & REEL PACKAGING OPTION AVAILABLE
PART NUMBER
NE33284A
PACKAGE OUTLINE
84AS
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
NFOPT1
Optimum Noise Figure, VDS = 2.0 V, IDS = 10 mA,
f = 12 GHz
dB
0.75
1.0
f = 4 GHz
dB
0.35
0.45
GA1
Associated Gain, VDS = 2.0 V, IDS = 10 mA, f = 12 GHz
dB
9.5
10.5
f = 4 GHz
dB
13.0
15.0
P1dB
Output Power at 1 dB Gain Compression Point, f = 12 GHz
VDS = 2.0 V, IDS = 10 mA
dBm
11.2
VDS = 2.0 V, IDS = 20 mA
dBm
12.0
G1dB
Gain at P1dB, f = 12 GHz
VDS = 2.0 V, IDS = 10 mA
dB
10.8
VDS = 2.0 V, IDS = 20 mA
dB
11.0
IDSS
Saturated Drain Current, VDS = 2.0 V,VGS = 0 V
mA
15
40
80
VP
Pinch-off Voltage, VDS = 2.0 V, IDS = 0.1 mA
V
-2.0
-0.8
-0.2
gm
Transconductance, VDS = 2.0 V, ID = 10 mA
mS
45
70
IGSO
Gate to Source Leakage Current, VGS = -3.0 V
µA
0.5
10.0
RTH (CH-A)
Thermal Resistance (Channel to Ambient)
°C/W
630
RTH (CH-C)2
Thermal Resistance (Channel to Case)
°C/W
280
310
ELECTRICAL CHARACTERISTICS (TA = 25°C)
DESCRIPTION
The NE33284A is a Hetero-Junction FET that uses the junction
between Si-doped AlGaAs and undoped InGaAs to create very
high mobility electrons. The device features mushroom shaped
TiAl gates for decreased gate resistance and improved power
handling capabilities. The mushroom gate also results in lower
noise figure and high associated gain. This device is housed in
an epoxy-sealed, metal/ceramic package and is intended for
high volume consumer and industrial applications.
Notes:
1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually
measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line
as a "go-no-go" screening tuned for the "generic" type but not for each specimen.
2. RTH (channel to case) for package mounted on an infinite heat sink.
NOISE FIGURE & ASSOCIATED
GAIN vs. FREQUENCY
VDS = 2 V, IDS = 10 mA
Frequency, f (GHz)
SUPER LOW NOISE HJ FET
California Eastern Laboratories
1
10
20
0
0.2
0.4
0.6
0.8
1.2
1.4
NF
GA
24
21
18
15
12
9
6
3
1


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