UPC2782GR-E1 datasheet(1/8 Pages) NEC

Teilenummer	UPC2782GR-E1

Bauteilbeschribung	SILICON MMIC L/S BAND DOWNCONVERTER

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Hersteller	NEC [NEC]

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PART NUMBER

UPC2782GR

PACKAGE OUTLINE

S20

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

ICC

Circuit Current

mA

46

66

78

fRFin

RF Frequency Response, PRFin = -20dBm, fIF = 480 MHz, -3 dB down

GHz

0.9

2.1

fIFout

IF Frequency Response, PRFin = -20 dBm, fRF = 2.1 GHz, -3 dB down

MHz

150

500

CG

Conversion Gain1,fRF = 900 MHz, fLO= 1380 MHz

dB

7

10

13

fRF = 2.1 GHz, fLO = 2.58 GHz

dB

8

11

14

PSAT

Saturated Output Power2, fRF = 900 MHz, fLO = 1380 MHz

dBm

+2

+5

fRF = 2.1 GHz, fLO = 2.58 GHz

dBm

+2

+5

NF

Noise Figure, fRF = 900 MHz

dB

11

14

fRF = 2.1 GHz

dB

13.5

16.5

IIP3

Input 3rd Order Intercept Point, fRF = 900, 930 MHz, fLO = 1380 MHz

dBm

0

fRF = 2.1, 2.13 GHz, fLO = 2.58 GHz

dBm

+4.5

IM3

Two-Tone 3rd Order Intermod Level,

fRF = 900, 930 MHz, PRF = -25 dBm each, fLO = 1380 MHz

dBc

50

fRF = 2.1, 2.13 GHz, PRF = -25 dBm each, fLO = 2.58 GHz

dBc

59

PLOout

Internal LO Output Power (pin 17), fLO = 1.9 GHz

dBm

-15

LOLRF

LO Leakage to RF Pin, fLO = 1.0 ~ 2.6 GHz

dBm

-40

LOLIF

LO Leakage to IF Pin, fLO = 1.0 ~ 2.6 GHz

dBm

-20

PN

SSB Phase Noise, 10 KHz Offset

dBc/Hz

-75

fOSC

Oscillator Frequency Range

GHz

1.3

2.6

FEATURES

•

WIDEBAND OPERATION: 900 - 2100 MHz

•

HIGH DYNAMIC RANGE: +4.5 dBm IIP3

•

HIGH LO-RF ISOLATION: -40 dBm Leakage

•

VARIABLE GAIN IF AMP: 25 dB Control Range

•

INTERNAL LO

•

SMALL 20 PIN SSOP PACKAGE

•

TAPE AND REEL PACKAGING OPTION AVAILABLE

INTERNAL BLOCK DIAGRAM

SILICON MMIC

L/S BAND DOWNCONVERTER

ELECTRICAL CHARACTERISTICS (TA = 25°C, Vcc = 5V, PLO = -10 dBm, ZL = ZS = 50 Ω unless otherwise specified)

UPC2782GR

DESCRIPTION

The UPC2782GR is a Silicon Monolithic Microwave Inte-

grated Circuit manufactured using the NESAT III process.

This process produces transistors with fT of 20 GHz. This

device consists of a Gilbert cell mixer, two stages of LO

buffering, local oscillator, external filter port, a high output

variable gain IF amp, and a temperature compensation

circuit.

The device was specifically designed for digital

satellite receivers, WLAN's, and other digital receiver appli-

cations.

NEC's stringent quality assurance and test procedures as-

sure the highest reliability and performance.

1

2

3

4

5

6

7

8

9

10

20

19

18

17

16

15

14

13

12

11

VCC (MIX)

GND (MIX)

RF IN

GND (MIX)

IF OUT

Vagc

IF AMP IN

LO (B2)

LO (C1)

GND (LO)

LO (C2)

LO (B1)

IF AMP OUT

IF AMP IN

GND (LO)

BIAS

CKT

VCC (IF)

GND (IF)

VCC (LO)

VCC (LO OUT)

LO OUT

California Eastern Laboratories

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