BAP27-01 datasheet(4/7 Pages) PHILIPS

Teilenummer	BAP27-01

Bauteilbeschribung	Silicon PIN diode

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Hersteller	PHILIPS [NXP Semiconductors]

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4 / 7 page

2001 Nov 01

4

Philips Semiconductors

Preliminary specification

Silicon PIN diode

BAP27-01

GRAPHICAL DATA

0.1

1

10

0.1

1

10

100

I

F (mA)

r

D

(

Ω)

Fig.2

Forward resistance as a function of forward

current; typical values.

f = 100 MHz; Tj =25 °C.

0

100

200

300

400

500

04

8

12

16

20

V

R (V)

C

d

(pF)

Fig.3

Diode capacitance as a function of reverse

voltage; typical values.

f= 1MHz; Tj =25 °C.

-0.5

-0.4

-0.3

-0.2

-0.1

0

0123

f (GHz)

|s

21|

2

(dB)

(3)

(2)

(1)

(4)

Fig.4

Insertion loss (

|s

21|

2) of the diode as a

function of frequency; typical values.

Diode inserted in series with a 50

Ω stripline circuit and biased

via the analyzer Tee network. Tamb =25 °C.

(1) IF =0.5 mA.

(2) IF =1 mA.

(3) IF =10 mA.

(4) IF =100 mA.

-40

-30

-20

-10

0

0123

f (GHz)

|s21|

2

(dB)

Fig.5

Isolation (

|s

21|

2) of the diode as a function of

frequency; typical values.

Diode zero biased and inserted in series with a 50

Ω stripline circuit.

Tamb =25 °C.

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