Datenblatt-Suchmaschine für elektronische Bauteile |
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BAP27-01 Datenblatt(PDF) 4 Page - NXP Semiconductors |
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BAP27-01 Datenblatt(HTML) 4 Page - NXP Semiconductors |
4 / 7 page 2001 Nov 01 4 Philips Semiconductors Preliminary specification Silicon PIN diode BAP27-01 GRAPHICAL DATA 0.1 1 10 0.1 1 10 100 I F (mA) r D ( Ω) Fig.2 Forward resistance as a function of forward current; typical values. f = 100 MHz; Tj =25 °C. 0 100 200 300 400 500 04 8 12 16 20 V R (V) C d (pF) Fig.3 Diode capacitance as a function of reverse voltage; typical values. f= 1MHz; Tj =25 °C. -0.5 -0.4 -0.3 -0.2 -0.1 0 0123 f (GHz) |s 21| 2 (dB) (3) (2) (1) (4) Fig.4 Insertion loss ( |s 21| 2) of the diode as a function of frequency; typical values. Diode inserted in series with a 50 Ω stripline circuit and biased via the analyzer Tee network. Tamb =25 °C. (1) IF =0.5 mA. (2) IF =1 mA. (3) IF =10 mA. (4) IF =100 mA. -40 -30 -20 -10 0 0123 f (GHz) |s21| 2 (dB) Fig.5 Isolation ( |s 21| 2) of the diode as a function of frequency; typical values. Diode zero biased and inserted in series with a 50 Ω stripline circuit. Tamb =25 °C. |
Ähnliche Teilenummer - BAP27-01 |
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Ähnliche Beschreibung - BAP27-01 |
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