Datenblatt-Suchmaschine für elektronische Bauteile |
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BAP64-04W Datenblatt(PDF) 3 Page - NXP Semiconductors |
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BAP64-04W Datenblatt(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 2001 Jan 29 3 Philips Semiconductors Product specification Silicon PIN diode BAP64-04W ELECTRICAL CHARACTERISTICS Tj =25 °C unless otherwise specified. Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Per diode VF forward voltage IF = 50 mA 0.95 1.1 V IR reverse current VR = 100 V − 10 µA VR =20V − 1 µA Cd diode capacitance VR = 0; f = 1 MHz 0.52 − pF VR = 1 V; f = 1 MHz 0.37 − pF VR = 20 V; f = 1 MHz 0.23 0.35 pF rD diode forward resistance IF = 0.5 mA; f = 100 MHz; note 1 20 40 Ω IF = 1 mA; f = 100 MHz; note 1 10 20 Ω IF = 10 mA; f = 100 MHz; note 1 2 3.8 Ω IF = 100 mA; f = 100 MHz; note 1 0.7 1.35 Ω τ L charge carrier life time when switched from IF = 10 mA to IR = 6 mA; RL = 100 Ω; measured at IR =3mA 1.55 −µs LS series inductance IF = 100 mA; f = 100 MHz 1.6 − nH SYMBOL PARAMETER VALUE UNIT Rth j-s thermal resistance from junction to soldering point 250 K/W |
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Ähnliche Beschreibung - BAP64-04W |
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