BAP64-04W datasheet(3/8 Pages) PHILIPS

Teilenummer	BAP64-04W

Bauteilbeschribung	Silicon PIN diode

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Hersteller	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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3 / 8 page

2001 Jan 29

3

Philips Semiconductors

Product speciﬁcation

Silicon PIN diode

BAP64-04W

ELECTRICAL CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

Note

1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

Per diode

VF

forward voltage

IF = 50 mA

0.95

1.1

V

IR

reverse current

VR = 100 V

−

10

µA

VR =20V

−

1

µA

Cd

diode capacitance

VR = 0; f = 1 MHz

0.52

−

pF

VR = 1 V; f = 1 MHz

0.37

−

pF

VR = 20 V; f = 1 MHz

0.23

0.35

pF

rD

diode forward resistance

IF = 0.5 mA; f = 100 MHz; note 1

20

40

Ω

IF = 1 mA; f = 100 MHz; note 1

10

20

Ω

IF = 10 mA; f = 100 MHz; note 1

2

3.8

Ω

IF = 100 mA; f = 100 MHz; note 1

0.7

1.35

Ω

τ

L

charge carrier life time

when switched from IF = 10 mA to

IR = 6 mA; RL = 100 Ω;

measured at IR =3mA

1.55

−µs

LS

series inductance

IF = 100 mA; f = 100 MHz

1.6

−

nH

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-s

thermal resistance from junction to soldering point

250

K/W

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