Datenblatt-Suchmaschine für elektronische Bauteile |
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IRFBA32N50K Datenblatt(PDF) 1 Page - International Rectifier |
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IRFBA32N50K Datenblatt(HTML) 1 Page - International Rectifier |
1 / 3 page IRFBA32N50K 6/2/00 www.irf.com 1 PD- 93924 SMPS MOSFET HEXFET® Power MOSFET VDSS RDS(on) ID 500V 0.14 Ω 32A Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 32 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 20 A IDM Pulsed Drain Current 128 PD @TC = 25°C Power Dissipation 360 W Linear Derating Factor 2.9 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Recommended clip force 20 N Absolute Maximum Ratings PROVISIONAL Super-220™ l Telecom and Data-Com off-Line SMPS l UninterruptIble Power Supply Benefits Applications l Low On-Resistance l High Speed Switching l Low Gate Drive Current Due to Improved Gate Charge Characteristics l Improved Avalanche Ruggedness and Dynamic dv/dt, Fully Characterized Avalanche Voltage and Current Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS = 32A, VGS = 0V trr Reverse Recovery Time ––– 650 ––– ns TJ = 125°C, IF = 32A Qrr Reverse RecoveryCharge ––– 9.0 ––– µC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) S D G Diode Characteristics 32 128 A Typical SMPS Topologies l Hard Switching Full and Half Bridge Circuits l Hard Switching Single Transistor Circuits l Power Factor Correction Circuits |
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