Datenblatt-Suchmaschine für elektronische Bauteile |
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1N4935G-T3 Datenblatt(PDF) 1 Page - Won-Top Electronics |
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1N4935G-T3 Datenblatt(HTML) 1 Page - Won-Top Electronics |
1 / 4 page 1N4933G – 1N4937G 1 of 4 © 2006 Won-Top Electronics Pb 1N4933G – 1N4937G 1.0A GLASS PASSIVATED FAST RECOVERY DIODE Features ! Glass Passivated Die Construction ! Low Forward Voltage Drop ! High Current Capability A B A ! High Reliability ! High Surge Current Capability Mechanical Data C ! Case: DO-41, Molded Plastic D ! Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 ! Polarity: Cathode Band ! Weight: 0.34 grams (approx.) ! Mounting Position: Any ! Marking: Type Number ! Lead Free: For RoHS / Lead Free Version, Add “-LF” Suffix to Part Number, See Page 4 Maximum Ratings and Electrical Characteristics @T A=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol 1N4933G 1N4934G 1N4935G 1N4936G 1N4937G Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 100 200 400 600 V RMS Reverse Voltage VR(RMS) 35 70 140 280 420 V Average Rectified Output Current (Note 1) @TA = 75°C IO 1.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 30 A Forward Voltage @IF = 1.0A VFM 1.2 V Peak Reverse Current @TA = 25°C At Rated DC Blocking Voltage @TA = 100°C IRM 5.0 100 µA Reverse Recovery Time (Note 2) trr 200 nS Typical Junction Capacitance (Note 3) Cj 15 pF Operating Temperature Range Tj -65 to +150 °C Storage Temperature Range TSTG -65 to +150 °C Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case 2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5. 3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. WTE POWER SEMICONDUCTORS DO-41 Dim Min Max A 25.4 — B 4.06 5.21 C 0.71 0.864 D 2.00 2.72 All Dimensions in mm |
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