Datenblatt-Suchmaschine für elektronische Bauteile |
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SDR966CTN Datenblatt(PDF) 1 Page - Solid States Devices, Inc |
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SDR966CTN Datenblatt(HTML) 1 Page - Solid States Devices, Inc |
1 / 2 page Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, CA 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Features: • Soft Recovery Diode • Ultra Fast Recovery: 80 nsec Maximum • Faster Recovery Versions Available • High Surge Rating • Low Reverse Leakage Current • Low Junction Capacitance • Hermetically Sealed Package • Gold Eutectic Die Attach Available • Ultrasonic Aluminum Wire Bond • Ceramic Seals for Improved Hermeticity Available • Common Anode and Doubler Versions Available • TX, TXV, Space Level Screening Available. Consult Factory. SDR966CTN & SDR966CTP thru SDR969CTN & SDR969CTP 60 AMP 600 - 900 Volts 80 nsec Ultra Fast Recovery Centertap Rectifier TO-258 (N) TO-259 (P) Maximum Ratings Symbol Value Units Peak Repetitive Reverse and DC Blocking Voltage SDR966CTN & SDR966CTP SDR967CTN & SDR967CTP SDR968CTN & SDR968CTP SDR969CTN & SDR969CTP VRRM VRWM VR 600 700 800 900 Volts Average Rectified Forward Current (Resistive Load, 60 Hz Sine Wave, TA = 25ºC) 1/ Io 60 Amps Peak Surge Current (Per Leg) (8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to Reach Equilibrium Between Pulses, TA = 25ºC) IFSM 500* Amps Operating & Storage Temperature Top & Tstg -65 to +200 ºC Maximum Thermal Resistance Junction to Case, Each Individual Diode Junction to Case 1/ RθJE 1.3 0.7 ºC/W Notes: 1/ Both Legs Tied Together * Available with Higher Surge Rating NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0077B DOC |
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