10/08/04

Parameter

Max.

Units

9.3

6.5

A

Pulsed Drain Current



37

Power Dissipation

82

W

Linear Derating Factor

0.5

W/°C

Gate-to-Source Voltage

±20

V

Single Pulse Avalanche Energy

‚

94

mJ

Avalanche Current



9.3

A

Repetitive Avalanche Energy



8.2

mJ

dv/dt

Peak Diode Recovery dv/dt

†

8.1

V/ns

Operating Junction and

-55 to +175

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 srew

„

10 lbf•in (1.1N•m)

Absolute Maximum Ratings

Description

S

D

G

IRF630NS

TO-220AB

IRF630N

TO-262

IRF630NL

IRF630N

IRF630NS

IRF630NL

International Rectifier utilize advanced processing

techniques to achieve extremely low

on-resistance per

silicon area. This benefit, combined with the fast switching

speed and ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer with an

extremely efficient and reliable device for use in a wide

variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation levels

to approximately 50 watts. The low thermal resistance and

low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

low internal connection resistance and can dissipate up to

2.0W in a typical surface mount application.

The through-hole version (IRF630NL) is available for low-

profile application.

www.irf.com

1

PD - 94005B