Datenblatt-Suchmaschine für elektronische Bauteile |
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SDR9911CTP Datenblatt(PDF) 1 Page - Solid States Devices, Inc |
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SDR9911CTP Datenblatt(HTML) 1 Page - Solid States Devices, Inc |
1 / 2 page NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0119B DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Features: • Ultra Fast Recovery: 60 nsec typical • High Surge Rating • Low Reverse Leakage Current • Low Forward Voltage Drop • Low Junction Capacitance • Hermetically Sealed Package • Gold Eutectic Die Attach available • Ultrasonic Aluminum Wire Bonds • Ceramic Seals for improved hermeticity available • Available in Common Anode and Doubler versions: SDR998CAN&P-SDR9912CAN&P SDR998DN&P-SDR9912DN&P • TX, TXV, Space Level Screening AvailableConsult Factory. SDR998CTN&P thru SDR9912CTN&P 100 AMP 800 -1200 Volts 80 nsec ULTRA FAST COMMON CATHODE RECTIFIER TO-258 TO-259 Maximum Ratings Symbol Value Units Peak Repetitive Reverse and DC Blocking Voltage SDR998CTN&P SDR999CTN&P SDR9910CTN&P SDR9911CTN&P SDR9912CTN&P VRRM VRWM VR 800 900 1000 1100 1200 Volts Average Rectified Forward Current (Resistive Load, 60 Hz Sine Wave, TA = 25ºC)note 1, 2 Io 60 Amps Peak Surge Current (8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to Reach Equilibrium Between Pulses, TA = 25ºC)note 2 IFSM 550 Amps Operating & Storage Temperature Top & Tstg -65 to +200 ºC Maximum Thermal Resistance Junction to Case, each individual diode Junction to Case, note 1 RθJE 0.9 0.5 ºC/W Note 1: Both legs tied together Note 2: Package limited |
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