Datenblatt-Suchmaschine für elektronische Bauteile |
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IRF7466PBF Datenblatt(PDF) 1 Page - International Rectifier |
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IRF7466PBF Datenblatt(HTML) 1 Page - International Rectifier |
1 / 8 page www.irf.com 1 8/11/04 IRF7466PbF SMPS MOSFET HEXFET® Power MOSFET Notes through are on page 8 Symbol Parameter Typ. Max. Units RθJL Junction-to-Drain Lead ––– 20 RθJA Junction-to-Ambient ––– 50 °C/W Thermal Resistance Absolute Maximum Ratings Symbol Parameter Max. Units VDS Drain-Source Voltage 30 V VGS Gate-to-Source Voltage ± 20 V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 11 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 9.0 A IDM Pulsed Drain Current 90 PD @TA = 25°C Maximum Power Dissipation 2.5 W PD @TA = 70°C Maximum Power Dissipation 1.6 W Linear Derating Factor 0.02 mW/°C TJ , TSTG Junction and Storage Temperature Range -55 to + 150 °C SO-8 Top View 8 1 2 3 4 5 6 7 D D D D G S A S S A VDSS RDS(on) max(mW) ID 30V 12.5@VGS = 10V 11A PD- 95730 Applications Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage and Current l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Lead-Free |
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