Datenblatt-Suchmaschine für elektronische Bauteile |
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SL1ICS3001W Datenblatt(PDF) 10 Page - NXP Semiconductors |
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SL1ICS3001W Datenblatt(HTML) 10 Page - NXP Semiconductors |
10 / 22 page I•CODE1 Chip Specification Rev. 2.1 May 2000 SL040521.doc/M Public Page 10 of 22 7 Mechanical Wafer Specifications For further information as described in the following chapters please refer to the following Philips documents: • Dicing Guidelines for Thin Wafers (< 200 µm) • General Specification for 6” Wafer (Prod. Spec.) In case of doubt or inconsistency with the following chapters the above mentioned specifications are applicable. Designation: each wafer is laser scribed with batch and wafer number Wafer diameter: 150 mm (6") ± 0.3 mm Die separation lane width: 80 µm (Scribe line) Electrical connection of substrate: VSS Geometrically complete dies per wafer: approx. 7400 Orientation of dies relat. to wafer flat: see attached cluster map Position of test structures: see attached cluster map Wafer layout: see attached cluster map Batch size: 24 wafers Process: 6C15 IDFW 7.1 Wafer Status • Tested, unsawn • Tested, sawn on FFC Minimum yield per lot: 30 % 7.2 Backside Treatment Wafers can be delivered with a thickness of 525 µm (untreated) or with 150 µm ± 15 µm (approx. 6 mil) grinded and etched backside. |
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