Datenblatt-Suchmaschine für elektronische Bauteile |
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STD60NF55L Datenblatt(PDF) 3 Page - STMicroelectronics |
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STD60NF55L Datenblatt(HTML) 3 Page - STMicroelectronics |
3 / 14 page STD60NF55L - STD60NF55L-1 Electrical ratings 3/14 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 55 V VGS Gate- source voltage ± 15 V ID Drain current (continuous) at TC = 25°C 60 A ID Drain current (continuous) at TC = 100°C 42 A IDM (1) 1. Pulse width limited by safe operating area. Drain current (pulsed) 240 A Ptot Total dissipation at TC = 25°C 110 W Derating Factor 0.73 W/°C dv/dt(2) 2. ISD ≤40A, di/dt ≤350A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX. Peak diode recovery voltage slope 16 V/ns EAS (3) 3. Starting Tj = 25 oC, I D = 17.5A, VDD =24V Single pulse avalanche energy 400 mJ Tstg Storage temperature -55 to 175 °C Tj Max. operating junction temperature Table 2. Thermal data Rthj-case Thermal resistance junction-case max 1.36 °C/W Rthj-amb Thermal resistance junction-to ambient max 62.5 °C/W TJ Maximum lead temperature for soldering purpose 275 °C |
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